Synthesis of SiC nanowires by thermal evaporation method without catalyst assistant

被引:66
|
作者
Chen, Kai [1 ]
Huang, Zhaohui [1 ]
Huang, Juntong [1 ]
Fang, Minghao [1 ]
Liu, Yan-gai [1 ]
Ji, Haipeng [1 ]
Yin, Li [1 ]
机构
[1] China Univ Geosci, Sch Mat Sci & Technol, Beijing 100083, Peoples R China
基金
中国国家自然科学基金;
关键词
SiC; Nanowires; Vapor-solid process; SiC-SiO2 core-shell structure; SILICON-CARBIDE NANOWIRES; LARGE-SCALE SYNTHESIS; FIELD-EMISSION; GROWTH; NANOSTRUCTURES; NANORODS; ARRAYS; CARBON;
D O I
10.1016/j.ceramint.2012.08.046
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
In this paper, SiC nanowires were successfully synthesized on Si substrate by the thermal evaporation method without the assistance of a metal catalyst. The phase composition, morphology and microstructure of the SiC-SiO2 core-shell nanowires were investigated by X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), energy dispersive spectroscopy (EDS), transmission electron microscopy (TEM), and high-resolution transmission electron microscopy (HRTEM). The SiC nanowires produced grew along the [111] direction and had diameters of 50-100 nm with lengths of several hundreds of microns. The SiC nanowire was composed of a single-crystalline SiC core with a thin amorphous SiO2 shell. The growth mechanism of the nanowires can be explained by the vapor-solid (VS) process. (C) 2012 Elsevier Ltd and Techna Group S.r.l. All rights reserved.
引用
收藏
页码:1957 / 1962
页数:6
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