Self-interstitial configurations in hcp Zr: a first principles analysis

The alignment of vacancy loops and voids along basal planes observed in irradiated Zr and Zr alloys requires anisotropic point-defect transport with a dominant contribution along the basal plane. For neutron irradiation, this can be explained by one-dimensional mobility of self-interstitial atom (SIA) clusters, but experiments with electron irradiation indicate unambiguously that even single SIA should exhibit anisotropic diffusion. No experimental information is available on SIA properties in Zr and the previous ab initio calculations did not provide any evidence of anisotropic diffusion mechanisms. An extensive investigation of SIAs in Zr has been performed from first principles using two different codes. It was demonstrated that the simulation cell size, type of pseudopotential, exchange-correlation functional and the c/a ratio are crucially important for determining the properties of interstitials in hcp Zr. The most stable SIA configurations lie in the basal plane, which should lead to SIA diffusion mainly along basal planes.