Influence of Deposition Time on Properties of the RF Sputtered TiO2 Thin Films

被引：2

作者：

Chaabouni, F. ^{[1
]}

Costa, L. C. ^{[2
]}

Selmi, M. ^{[1
]}

Abaab, M. ^{[1
]}

Rezig, B. ^{[1
]}

机构：

[1] Photovolta & Semicond Mat Lab, ENIT POB 37,Belvedere 1002, Tunis, Tunisia

[2] Univ Aveiro, Dept Phys, P-3810193 Aveiro, Portugal

来源：

ADVANCED MATERIALS FORUM IV | 2008年 / 587-588卷

关键词：

TiO2; RF sputtering; deposition time; annealing;

D O I：

10.4028/www.scientific.net/MSF.587-588.824

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

TiO2 films were prepared using radio frequency (RF) magnetron sputtering and were deposited on glass and Si substrates. We varied deposition time at room temperature with RV density of 3.7 W/cm(2) and argon flow rate of 4 seem. The morphological, structural, optical and electrical properties were studied by Atomic Force Microscope (AFM), X ray Diffractometer (XRD) and UV-VIS-NIR spcetrophotometer. The transmittance is maintained in the range of 70-90% in the visible and near-infrared range, high refractive index of 2.4 and large direct hand gap of about 3.5 eV arc obtained. These films arc annealed at 300 C during 2 hours. The annealing effect is investigated in this work. file results of this study suggest that the variation of the deposition time allow the control of the structural. optical and electrical properties of the films.

引用

页码：824 / +

页数：2

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