Reversely-Synchronized-Stress-Induced Degradation in Polycrystalline Silicon Thin-Film Transistors and Its Suppression by a Bridged-Grain Structure

被引：4
作者：
Zhang, Meng [1 ]
Deng, Sunbin [2 ]
Zhou, Wei [2 ]
Yan, Yan [1 ]
Wong, Man [2 ]
Kwok, Hoi-Sing [2 ]
机构：
[1] Shenzhen Univ, Inst Microscale Optoelect IMO, Shenzhen 518060, Peoples R China
[2] Hong Kong Univ Sci & Technol, SKL ADT, Hong Kong, Peoples R China
来源：
IEEE ELECTRON DEVICE LETTERS | 2020年 / 41卷 / 08期
关键词：
Reversely synchronized stress; polycrystalline silicon; thin-film transistors; dynamic hot carrier; bridged grain; POLY-SI TFTS; NEGATIVE BIAS; REDUCTION; MECHANISM;
D O I：
10.1109/LED.2020.3005046
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this letter, a reversely synchronized stress (RSS) is proposed to simulate the working condition of switching thin-film transistors (TFTs) in active-matrix displays. The reliability of polycrystalline silicon (poly-Si) TFTs under RSS is characterized and investigated. RSS brings huge device degradation. A dynamic hot carrier (HC) effect, dependent on transition edges of RSS, dominates the degradation. Combined with a transient simulation, the degradation mechanism under RSS in poly-Si TFTs is discussed and developed. To suppress RSS-induced HC degradation, a bridged-grain (BG) structure is employed in the active layer of poly-Si TFTs. Via BG lines' reducing the lateral electric field in the channel at source/drain sides, the reliability of BG TFTs under RSS is significantly improved.
引用
收藏
页码：1213 / 1216
页数：4
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