High Curie temperatures at low compensation in the ferromagnetic semiconductor (Ga,Mn)As

被引：30
|
作者：
Wang, M. [1 ]
Edmonds, K. W. [1 ]
Gallagher, B. L. [1 ]
Rushforth, A. W. [1 ]
Makarovsky, O. [1 ]
Patane, A. [1 ]
Campion, R. P. [1 ]
Foxon, C. T. [1 ]
Novak, V. [2 ]
Jungwirth, T. [1 ,2 ]
机构：
[1] Univ Nottingham, Sch Phys & Astron, Nottingham NG7 2RD, England
[2] Inst Phys ASCR, Vvi, Prague 16253 6, Czech Republic
来源：
PHYSICAL REVIEW B | 2013年 / 87卷 / 12期
基金：
英国工程与自然科学研究理事会;
关键词：
GAMNAS; GA1-XMNXAS; LOCATION; DEFECTS; FIELD; BAND;
D O I：
10.1103/PhysRevB.87.121301
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We investigate the relationship between the Curie temperature T-C and the carrier density p in the ferromagnetic semiconductor (Ga,Mn)As. Carrier densities are extracted from analysis of the Hall resistance at low temperatures and high magnetic fields. Results are found to be consistent with ion channeling measurements when performed on the same samples. We find that both T-C and the electrical conductivity increase monotonically with increasing p, and take their largest values when p is comparable to the concentration of substitutional Mn acceptors. This is inconsistent with models in which the Fermi level is located within a narrow isolated impurity band. DOI: 10.1103/PhysRevB.87.121301
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页数：4
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