Native Graphene Oxides at Graphene Edges

被引：0
|
作者：
Shimamoto, Shinsuke [1 ,2 ]
Naitou, Yuichi [3 ]
Fukuyama, Yasuhiro [1 ,4 ]
Kiryu, Shogo [2 ]
Kaneko, Nobu-hisa [1 ]
机构：
[1] Natl Inst Adv Ind Sci & Technol, Natl Metrol Inst Japan, Tsukuba, Ibaraki 3058563, Japan
[2] Tokyo City Univ, Tokyo 1588557, Japan
[3] Natl Inst Adv Ind Sci & Technol, Nanoelect Res Inst, Tsukuba, Ibaraki 3058568, Japan
[4] NIST, Gaithersburg, MD 20899 USA
来源：
IEEE TRANSACTIONS ON INSTRUMENTATION AND MEASUREMENT | 2013年 / 62卷 / 06期
关键词：
Graphene nanoribbon (GNR); graphene; quantized Hall resistance (QHR) standard; quantum Hall effect; scanning capacitance microscopy (SCM); scanning probe microscopy (SPM); FORCE;
D O I：
10.1109/TIM.2013.2238454
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Electronic properties of graphene edges on a SiO2 substrate have been examined using scanning probe microscopy. Distinctive dot-like protrusions appearing nearly periodically on the edges of graphene were observed, and the density of the protrusions increased as the number of graphene layers increased. Imaging analysis revealed that the electrostatic properties of these protrusions are different from those of surrounding graphene. These findings are discussed and interpreted in terms of the local oxidation at the native graphene edges.
引用
收藏
页码：1461 / 1466
页数：6
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