Structural, electrical, and optical properties of Zn-In-Sn-O films for silicon heterojunction solar cells

被引：2
作者：
Lee, Seunghun [1 ]
Ji, Kwang-Sun [1 ,2 ]
Park, Hyomin [1 ]
Tark, Sung Ju [1 ]
Park, Sungeun [1 ]
Lee, Jeong Chul [3 ]
Kim, Won Mok [4 ]
Kang, Yoonmook [5 ]
Lee, Hae-Seok [1 ]
Kim, Donghwan [1 ]
机构：
[1] Korea Univ, Dept Mat Sci & Engn, Seoul 136713, South Korea
[2] LG Elect Adv Res Inst, Solar Energy Grp, Devices & Mat Lab, Seoul 137724, South Korea
[3] Korea Inst Energy Res, KIER UNIST Adv Ctr Energy, Ulsan 689798, South Korea
[4] Korea Inst Sci & Technol, Elect Mat Res Ctr, Seoul 136791, South Korea
[5] Korea Univ, Grad Sch Energy & Environm, KU KIST GREEN Sch, Seoul 136713, South Korea
来源：
THIN SOLID FILMS | 2015年 / 589卷
关键词：
Zinc indium tin oxide; Magnetron sputtering; Transparent conducting oxide; Silicon solar cell; OXIDE THIN-FILMS; TRANSPARENT;
D O I：
10.1016/j.tsf.2015.05.025
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We investigated the structural, optical, and electrical properties of Zn-In-Sn-O (ZITO) films prepared by RF magnetron sputtering for silicon heterojunction solar cells. The effects of Zn addition on the properties of the as-grown films were examined. XRD patterns of the ZITO films deposited at room temperature showed a broad peak. The cross-sectional TEM image of ZITO films at low Zn levels exhibited a typical fine or nanostructure embedded in an amorphous phase. On the other hand, at higher Zn addition, the films exhibited a completely amorphous phase. The carrier concentration decreased with increasing Zn content. The lowest electrical resistivity of 5.5 x 10(-4) Omega cm was observed for a ZITO film with 4.83 Zn at.%. All ZITO films grown in this study showed transmittance of over 80% in the visible and near-infrared spectral range. The absorption was less than 5% in the visible region. (C) 2015 Elsevier B.V. All rights reserved.
引用
收藏
页码：233 / 237
页数：5
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