Metallo-organic compound-based plasma enhanced CVD of ZrO2 films for microelectronic applications

被引：17
作者：
Chatterjee, S
Samanta, SK
Banerjee, HD [1 ]
Maiti, CK
机构：
[1] Indian Inst Technol, Dept Elect & Elect Commun Engn, Kharagpur 721302, W Bengal, India
[2] Indian Inst Technol, Ctr Mat Sci, Kharagpur 721302, W Bengal, India
来源：
BULLETIN OF MATERIALS SCIENCE | 2001年 / 24卷 / 06期
关键词：
zirconium dioxide; high-k; PECVD; EOT;
D O I：
10.1007/BF02704004
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
ZrO2 films on silicon wafer were deposited by microwave plasma enhanced chemical vapour deposition technique using zirconium tetratert butoxide (ZTB). The structure and composition of the deposited layers were studied by fourier transform infrared spectroscopy (FTIR). The deposition rates were also studied. MOS capacitors fabricated using deposited oxides were used to characterize the electrical properties of ZrO2 films. The films showed their suitability for microelectronic applications.
引用
收藏
页码：579 / 582
页数：4
相关论文
共 10 条
[1]   Advances in low temperature processing of silicon nitride based dielectrics and their applications in surface passivation and integrated optical devices [J].
Agnihotri, OP ;
Jain, SC ;
Poortmans, J ;
Szlufcik, J ;
Beaucarne, G ;
Nijs, J ;
Mertens, R .
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2000, 15 (07) :R29-R40
[2]   CHEMICAL VAPOR-DEPOSITION AND CHARACTERIZATION OF ZRO2 FILMS FROM ORGANOMETALLIC COMPOUNDS [J].
BALOG, M ;
SCHIEBER, M ;
MICHMAN, M ;
PATAI, S .
THIN SOLID FILMS, 1977, 47 (02) :109-120
[3]   ZrO2 film growth by chemical vapor deposition using zirconium tetra-tert-butoxide [J].
Cameron, MA ;
George, SM .
THIN SOLID FILMS, 1999, 348 (1-2) :90-98
[4]   A SINGLE-FREQUENCY APPROXIMATION FOR INTERFACE-STATE DENSITY DETERMINATION [J].
HILL, WA ;
COLEMAN, CC .
SOLID-STATE ELECTRONICS, 1980, 23 (09) :987-993
[5]   Effect of O2 post-deposition anneals on the properties of ultra-thin SiOx/ZrO2 gate dielectric stacks [J].
Houssa, M ;
Naili, M ;
Zhao, C ;
Bender, H ;
Heyns, MM ;
Stesmans, A .
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2001, 16 (01) :31-38
[6]   Thermodynamic stability of binary oxides in contact with silicon [J].
Hubbard, KJ ;
Schlom, DG .
JOURNAL OF MATERIALS RESEARCH, 1996, 11 (11) :2757-2776
[7]   LOW-TEMPERATURE OXIDATION OF SILICON IN A MICROWAVE-DISCHARGED OXYGEN PLASMA [J].
KIMURA, SI ;
MURAKAMI, E ;
MIYAKE, K ;
WARABISAKO, T ;
SUNAMI, H ;
TOKUYAMA, T .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (06) :1460-1466
[8]   Electrical properties of ZrO2 gate dielectric on SiGe [J].
Ngai, T ;
Qi, WJ ;
Sharma, R ;
Fretwell, J ;
Chen, X ;
Lee, JC ;
Banerjee, S .
APPLIED PHYSICS LETTERS, 2000, 76 (04) :502-504
[9]  
Qi W.J., 1999, Tech. Dig. IEDM, P145
[10]   Growth, trapping and abatement of dielectric particles in PECVD systems [J].
Raoux, S ;
Cheung, D ;
Fodor, M ;
Taylor, WN ;
Fairbairn, K .
PLASMA SOURCES SCIENCE & TECHNOLOGY, 1997, 6 (03) :405-414
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