Investigation of Electrically Active Defects in n-CdS/p-CdTe Solar Cells

被引:5
作者
Kharangarh, P. [1 ]
Misra, D. [2 ]
Georgiou, G. E. [1 ]
Chin, K. K. [1 ]
机构
[1] NJIT, Dept Phys, Newark, NJ 07102 USA
[2] NJIT, Dept Elect & Comp Engn, Newark, NJ 07102 USA
来源
PHOTOVOLTAICS FOR THE 21ST CENTURY 7 | 2011年 / 41卷 / 04期
关键词
DEEP LEVELS; TRANSPORT;
D O I
10.1149/1.3628630
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
Current-voltage (J-V) and Capacitance-voltage (C-V) measurements of diode devices at different temperatures and illumination intensities are used to provide valuable information about non-idealities in the pn semiconductor junction and metal-semiconductor junction. In principle, continuous monitoring of this information can be used to improve diode and solar cell performance. In this paper we characterize the n(+)p CdTe on CdS solar cell. The activation energy derived from the temperature dependence of our solar cell J-V curves is consistent with trap assisted tunneling being the dominant carrier transport mechanism in the pn junction. Interpretation is complicated in the particular case of thin-film CdTe, by multiple non-shallow (not fully ionized) "doping" energy levels in the CdTe band gap are in reality, which are not distinct from "trap" energy levels. We use C-V profiling to further understand the concentrations of recombination centers as well as the interplay of the double acceptor Cd vacancy and the non-shallow acceptor Cu substitute of Cd.
引用
收藏
页码:233 / 240
页数:8
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