Thermopower enhancement in Pb1-xMnxTe alloys and its effect on thermoelectric efficiency

被引:214
作者
Pei, Yanzhong [1 ]
Wang, Heng [2 ]
Gibbs, Zachary M. [2 ]
LaLonde, Aaron D. [2 ]
Snyder, G. Jeffrey [1 ,2 ]
机构
[1] Tongji Univ, Sch Mat Sci & Engn, Shanghai 201804, Peoples R China
[2] CALTECH, Dept Mat Sci, Pasadena, CA 91125 USA
关键词
band engineering; resonant states; thermoelectric; TRANSITION ELEMENT TI; 2ND VALENCE-BAND; OPTICAL-PROPERTIES; LEAD-TELLURIDE; THERMAL-CONDUCTIVITY; TRANSPORT-PROPERTIES; RESONANCE STATES; PBTE; PERFORMANCE; THALLIUM;
D O I
10.1038/am.2012.52
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The Seebeck coefficient of p-type PbTe can be enhanced at 300 K, either due to the addition of Tl-resonant states or by manipulation of the multiple valence bands by alloying with isovalent compounds, such as MgTe. PbTe alloyed with MnTe shows a similar thermopower enhancement that could be due to either mechanism. Here we investigate the characteristics that distinguish the resonant state mechanism from that due to multiple valence bands and their effect on the thermoelectric figure of merit, zT. Ultimately, we find that the transport properties of PbTe alloyed with MnTe can be explained by alloy scattering and multiple band model that result in a zT as high as 1.6 at 700 K, and additionally a similar to 30% enhancement of the average zT. NPG Asia Materials (2012) 4, e28; doi:10.1038/am.2012.52; published online 21 September 2012
引用
收藏
页码:e28 / e28
页数:6
相关论文
共 72 条
[1]   LATTICE THERMAL CONDUCTIVITY OF DISORDERED SEMICONDUCTOR ALLOYS AT HIGH TEMPERATURES [J].
ABELES, B .
PHYSICAL REVIEW, 1963, 131 (05) :1906-&
[2]   Growth and electrical properties of Pb1-xMnxTe crystals [J].
Agaev, ZF ;
Allakhverdiev, EM ;
Murtuzov, GM ;
Abdinov, DS .
INORGANIC MATERIALS, 2003, 39 (05) :449-451
[3]   Ab initio study of deep defect states in narrow band-gap semiconductors:: Group III impurities in PbTe [J].
Ahmad, S ;
Hoang, K ;
Mahanti, SD .
PHYSICAL REVIEW LETTERS, 2006, 96 (05)
[4]  
Airapetyants S.V., 1966, FIZ TVERD TELA+, V8, P1069
[5]  
ALEKSEEV.GT, 1971, SOV PHYS SEMICOND+, V4, P1122
[6]   HALL COEFFICIENT BEHAVIOR AND 2ND VALENCE BAND IN LEAD TELLURIDE [J].
ALLGAIER, RS ;
HOUSTON, BB .
JOURNAL OF APPLIED PHYSICS, 1966, 37 (01) :302-+
[7]   VALENCE BANDS IN LEAD TELLURIDE [J].
ALLGAIER, RS .
JOURNAL OF APPLIED PHYSICS, 1961, 32 :2185-&
[8]  
ANDREEV AA, 1967, SOV PHYS SEMICOND+, V1, P145
[9]   OPTICAL-ABSORPTION IN PBTE DOPED WITH CR [J].
BALEVA, MI ;
BORISSOVA, LD .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1983, 16 (24) :L907-L911
[10]   DEFORMATION POTENTIALS AND MOBILITIES IN NON-POLAR CRYSTALS [J].
BARDEEN, J ;
SHOCKLEY, W .
PHYSICAL REVIEW, 1950, 80 (01) :72-80