Nanostructured materials and devices for sensor and electronic applications

被引：4

作者：

Moore, DF

Milne, WI

Oda, S

机构：

[1] Univ Cambridge, Dept Engn, Cambridge CB2 1PZ, England

[2] Tokyo Inst Technol, Res Ctr Quantum Effect Elect, Meguro Ku, Tokyo 1528552, Japan

来源：

POWER ENGINEERING JOURNAL | 1999年 / 13卷 / 02期

关键词：

D O I：

10.1049/pe:19990210

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Advances in nanotechnology are reviewed including a discussion of microelectronics and microsystems, with particular reference to potential applications in power engineering. The major emphasis is on silicon technology where the electrical properties are being exploited in circuit applications and the mechanical properties can be used in a growing range of sensor and micromechanical applications in integrated microsystems.

引用

收藏

页码：89 / 93

页数：5

相关论文

共 22 条

[1] In-line sagnac interferometer current sensor [J].

Blake, J ;

Tantaswadi, P ;

deCarvalho, RT .

IEEE TRANSACTIONS ON POWER DELIVERY, 1996, 11 (01) :116-121

[2] Silicon nitride microclips for the kinematic location of optic fibres in silicon V-shaped grooves [J].

Bostock, RM ;

Collier, JD ;

Jansen, RJE ;

Jones, R ;

Moore, DF ;

Townsend, JE .

JOURNAL OF MICROMECHANICS AND MICROENGINEERING, 1998, 8 (04) :343-360

[3] Influence of ion energy and substrate temperature on the optical and electronic properties of tetrahedral amorphous carbon (ta-C) films [J].

Chhowalla, M ;

Robertson, J ;

Chen, CW ;

Silva, SRP ;

Davis, CA ;

Amaratunga, GAJ ;

Milne, WI .

JOURNAL OF APPLIED PHYSICS, 1997, 81 (01) :139-145

[4]

COULTER M, 1995, ELECT TIMES 0601, P12

[5] Focused ion beams in microsystem fabrication [J].

Daniel, JH ;

Moore, DF ;

Walker, JF ;

Whitney, JT .

MICROELECTRONIC ENGINEERING, 1997, 35 (1-4) :431-434

[6]

Deimel P. P., 1991, Journal of Micromechanics and Microengineering, V1, P199, DOI 10.1088/0960-1317/1/4/002

[7] Fabrication and electrical characteristics of single electron tunneling devices based on Si quantum dots prepared by plasma processing [J].

Dutta, A ;

Kimura, M ;

Honda, Y ;

Otobe, M ;

Itoh, A ;

Oda, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1997, 36 (6B) :4038-4041

[8]

GERNER M, 1995, IEEE J MICRO ELECT M, V4, P328

[9] DIRECTLY PATTERNED LOW-VOLTAGE PLANAR TUNGSTEN LATERAL FIELD-EMISSION STRUCTURES [J].

HOOLE, ACF ;

MOORE, DF ;

BROERS, AN .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1993, 11 (06) :2574-2578

[10] Development of an optical current transducer with a bulk type Faraday sensor for metering [J].

Katsukawa, H ;

Ishikawa, H ;

Okajima, H ;

Cease, TW .

IEEE TRANSACTIONS ON POWER DELIVERY, 1996, 11 (02) :702-707