Effect of thickness, bandgap, and carrier concentration on the basic parameters of Cu2O nanostructures photovoltaics: numerical simulation study

There is no clear data about the optimum thicknesses, band gaps, and charge densities of Cu2O thin films to fabricate solar cells. Therefore, here, Solar Cell Capacitance Simulator (SCAPS) program was employed to simulate the Cu2O nanostructures solar cells. Effect of window layer thickness, absorber layer thickness, bandgap, and carrier concentration on basic parameters of Cu2O solar cells were studied. Results revealed that window layer thickness in range from 0.3 to 0.4 mu m is optimum to produce a higher performance of about 6.5%. Bandgap should be greater than 2.1 eV and donor carrier concentration under 1x10(16) cm(-3 )are required to improve solar cell efficiency of about 8%. Built-in potential, width of the depletion layer, collection length of charge carrier, lifetime of minority carrier, and recombination rate are the main factors directing performance of devices. Consequently, employing our results to fabricate Cu2O solar cells is a step forward to improve efficiencies.