XPS Analysis of ZnO thin Films Obtained by Pulsed Laser Deposition

被引：19

作者：

He, Jianting ^{[1
]}

Tan, Boxue ^{[1
]}

Su, Yuanbin ^{[1
]}

Yang, Shulian ^{[1
]}

Wei, Qinqin ^{[1
]}

机构：

[1] Shandong Univ Technol Zibo, Sch Elect & Elect Engn, Zibo, Peoples R China

来源：

MANUFACTURING SCIENCE AND TECHNOLOGY, PTS 1-8 | 2012年 / 383-390卷

关键词：

XPS; ZnO; pulsed laser deposition; oxygen partial pressure; TEMPERATURE;

D O I：

10.4028/www.scientific.net/AMR.383-390.6293

中图分类号：

TP39 [计算机的应用];

学科分类号：

081203 ; 0835 ;

摘要：

Highly c-axis oriented ZnO thin films were deposited on n-Si (111) substrate at various oxygen partial pressures by pulsed laser deposition (PLD). X-ray diffraction (XRD), Atomic force microscopy (AFM) were used to analyze the influence of the oxygen partial pressure on the crystallization and morphology of the ZnO thin films. X-ray photoelectron spectroscopy (XPS) was used to analyze relationships between chemical shifts of XPS energy spectra and stoichiometric ratios of ZnO thin films, and quantitative relationships between content of Zn, O and oxygen partial pressures. An optimal crystallized and stoichiometric ZnO thin film was observed at the oxygen partial pressure of 6.5Pa.

引用

页码：6293 / 6296

页数：4

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