Gate-Controlled Spin Injection at LaAlO3/SrTiO3 Interfaces

被引：80

作者：

Reyren, N. ^{[1
,2
]}

Bibes, M. ^{[1
,2
]}

Lesne, E. ^{[1
,2
]}

George, J. -M. ^{[1
,2
]}

Deranlot, C. ^{[1
,2
]}

Collin, S. ^{[1
,2
]}

Barthelemy, A. ^{[1
,2
]}

Jaffres, H. ^{[1
,2
]}

机构：

[1] CNRS Thales, Unite Mixte Phys, F-91767 Palaiseau, France

[2] Univ Paris 11, F-91405 Orsay, France

来源：

PHYSICAL REVIEW LETTERS | 2012年 / 108卷 / 18期

关键词：

OXIDE HETEROSTRUCTURES; ROOM-TEMPERATURE; SILICON; STATE; FILMS;

D O I：

10.1103/PhysRevLett.108.186802

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We report results of electrical spin injection at the high-mobility quasi-two-dimensional electron system (2-DES) that forms at the LaAlO3/SrTiO3 interface. In a nonlocal, three-terminal measurement geometry, we analyze the voltage variation associated with the precession of the injected spin accumulation driven by perpendicular or transverse magnetic fields (Hanle and inverted Hanle effect). The influence of bias and back-gate voltages reveals that the spin accumulation signal is amplified by resonant tunneling through localized states in the LaAlO3 strongly coupled to the 2-DES by tunneling transfer.

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页数：5

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