Theoretical investigation of the structural and electronic properties of BN/GaN superlattices growth along various crystallographic axes

被引：3

作者：

Oukli, Mimouna ^{[1
]}

Mehnane, Noureddine ^{[1
]}

Oukli, Nabila ^{[2
]}

Bouiadjra, Bachir Bachir ^{[1
]}

Beghoul, Hafida ^{[1
]}

机构：

[1] Univ Djillali Liabes Sidi Bel Abbes, Fac Genie Elect, Appl Mat Lab, Sidi Bel Abbes 2200, Algeria

[2] Univ Djillali Liabes Sidi Bel Abbes, Fac Sci, Lab Macromol & Phys Organ Chem LCOPM, Sidi Bel Abbes 22000, Algeria

来源：

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2019年 / 114卷

关键词：

Gallium nitride; Boron nitride; Growth axis; Superlattices BN/GaN; Electronic structure; OPTICAL-PROPERTIES; 1ST PRINCIPLES; ZINC BLENDE; GAN; NANOSTRUCTURES; BN; 1ST-PRINCIPLES; ALN;

D O I：

10.1016/j.physe.2019.113653

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

This paper reports first-principles investigations of structural and electronic properties of standard BN/GaN superlattices oriented following the (001), (110) and (111) axes using the full potential linear muffin-fin orbitals method (FPLMTO) in its plane wave approximation (PLW) which enables an accurate treatment of the interstitial regions. The choice of this method ensures the present work to be free from adjustable parameters and enabled us to perform a microscopic study. The results for BN/GaN superlattices with the three directions are investigated and compared. The electronic structure of bulks and also of (001), (110) and (111) growth axis SLs are calculated and it is shown that the (111) growth axis impacts the electronic structure, which indicates a great influence of the p-orbital.

引用

页数：8

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