Fluorine doped indium oxide films for silicon solar cells

被引：29

作者：

Untila, G. G. ^{[1
]}

Kost, T. N. ^{[1
]}

Chebotareva, A. B. ^{[1
]}

机构：

[1] Moscow MV Lomonosov State Univ, SINP, Moscow 119991, Russia

来源：

THIN SOLID FILMS | 2009年 / 518卷 / 04期

基金：

俄罗斯基础研究基金会;

关键词：

TCO; Indium Fluorine Oxide; Pyrolysis; Silicon; Solar cells; Heterojunction; TRANSPARENT; CRYSTALLINE; DEPOSITION;

D O I：

10.1016/j.tsf.2009.02.152

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The effect of conditions of preparation of the In(2)O(3):F(IFO)/(pp(+))Si solar cell (SC) by pyrosol method was systematically studied with the goal to maximize its photovoltage. Heterojunction IFO/(pp(+))Si SC was obtained with the efficiency of 16.6% and photovoltage of 617 mV as well as the IFO/(n(+)pp(+))Si SC with the efficiency of 19.2% using the following obtained optimal conditions: film-forming solution: 0.2 M InCl(3) + 0.05 M NH(4)F + 0.1 M H(2)O in methanol; carrier gas - Ar + 5% O(2); deposition temperature - 480 degrees C; duration of deposition - 2 min; two-minute annealing in argon with sprayed methanol at a temperature of 380 degrees C. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：1345 / 1349

页数：5

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