Effect of Sputtered-Al2O3 Layer Thickness on the Threshold Voltage of III-Nitride MIS-HEMTs

被引：37

作者：

Dutta, Gourab ^{[1
]}

DasGupta, Nandita ^{[1
]}

DasGupta, Amitava ^{[1
]}

机构：

[1] IIT Madras, Dept Elect Engn, Microelect & MEMS Lab, Madras 600036, Tamil Nadu, India

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2016年 / 63卷 / 04期

关键词：

Al2O3; AlGaN/GaN; AlInN/GaN; MIS-HEMT; oxide thickness; threshold voltage; ELECTRON-MOBILITY TRANSISTORS; FIELD-EFFECT TRANSISTORS; CURRENT COLLAPSE; ALINN/GAN HEMTS; ALGAN/GAN; AL2O3; PASSIVATION; INTERFACE; MOSHFETS; SURFACE;

D O I：

10.1109/TED.2016.2529428

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Dependence of threshold voltage (V-Th) on oxide thickness (t(ox)) for GaN-based metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs) using sputter-deposited Al2O3 as gate dielectric is studied in detail. Different III-nitride (III-N) heterostructures (AlGaN/GaN and AlInN/GaN) with/without GaN cap layer were used for fabricating these MIS devices. Interestingly, for all the sets of devices, a positive shift in V-Th was observed initially with a increase in tox, followed by a negative shift of the same. A comprehensive analytical model has been proposed to explain the variation of V-Th with t(ox) and has been shown to match the experimental data for MIS-HEMTs fabricated on different heterostructures and with different values of t(ox). This model allows the extraction of different charge components in the oxide or at oxide/III-N interface. Normally OFF AlInN/GaN MIS-HEMTs with V-Th of +0.67 V have been demonstrated with the optimized t(ox) of sputtered Al2O3.

引用

页码：1450 / 1458

页数：9

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