Ultrafast excited-state dynamics of SnSe2-SnSe composite thin film

被引：13
|
作者：
Kumar, Manoj [1 ,2 ]
Sharma, Prince [1 ,3 ]
Rani, Sanju [1 ,2 ]
Kumar, Mahesh [1 ,4 ]
Singh, V. N. [1 ,2 ]
机构：
[1] Acad Sci & Innovat Res AcSIR, Ghaziabad 201002, Uttar Pradesh, India
[2] Natl Phys Lab, Indian Reference Mat BND Div, CSIR, Dr KS Krishnan Marg, New Delhi 110012, India
[3] Natl Phys Lab, Quantum Phenomenon & Applicat, CSIR, Dr KS Krishnan Marg, New Delhi 110012, India
[4] Natl Phys Lab, Adv Mat & Device Metrol Div, CSIR, Dr KS Krishnan Marg, New Delhi 110012, India
来源：
AIP ADVANCES | 2021年 / 11卷 / 02期
关键词：
Tin compounds;
D O I：
10.1063/5.0038269
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
We report the ultrafast carrier dynamics of an SnSe2-SnSe composite thin film (similar to 150 nm thick) deposited using thermal evaporation of in-house synthesized SnSe2 powder. Raman and UV-visible spectroscopy supports the optical properties (direct and indirect bandgaps of 1.86 eV and 0.96 eV, respectively). Ultrafast transient spectroscopy is used to study the charge excited state dynamics in the SnSe2-SnSe composite thin film in the femtosecond to nanosecond interval. An energy model has been proposed based on the ultrafast transient absorption and the thin film's steady-state absorption studies. This article provides comprehensive knowledge about the excited carriers and their relaxations in 0.9 ps-31.1 ns via different trap states.
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收藏
页数：6
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