Ultrafast excited-state dynamics of SnSe2-SnSe composite thin film

We report the ultrafast carrier dynamics of an SnSe2-SnSe composite thin film (similar to 150 nm thick) deposited using thermal evaporation of in-house synthesized SnSe2 powder. Raman and UV-visible spectroscopy supports the optical properties (direct and indirect bandgaps of 1.86 eV and 0.96 eV, respectively). Ultrafast transient spectroscopy is used to study the charge excited state dynamics in the SnSe2-SnSe composite thin film in the femtosecond to nanosecond interval. An energy model has been proposed based on the ultrafast transient absorption and the thin film's steady-state absorption studies. This article provides comprehensive knowledge about the excited carriers and their relaxations in 0.9 ps-31.1 ns via different trap states.