Nitride-based LEDs with an insulating SiO2 layer underneath p-pad electrodes

被引：32

作者：

Chang, S. J. ^{[1
]}

Shen, C. F.

Chen, W. S.

Ko, T. K.

Kuo, C. T.

Yu, K. H.

Shei, S. C.

Chiou, Y. Z.

机构：

[1] Natl Cheng Kung Univ, Inst Microelect, Tainan 70101, Taiwan

[2] Natl Cheng Kung Univ, Dept Elect Engn, Adv Optoelect Technol Ctr, Tainan 70101, Taiwan

[3] Epitech Technol Corp, Hsin Shi 744, Taiwan

[4] Natl Univ Tainan, Dept Elect Engn, Tainan 700, Taiwan

[5] So Taiwan Univ Technol, Dept Elect Engn, Tainan 710, Taiwan

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 2007年 / 10卷 / 06期

关键词：

D O I：

10.1149/1.2718392

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

We proposed a simple method to reduce the current crowding effect of nitride-based light emitting diodes (LEDs) without extra dry etching and refill. It was found that we can achieve much better current spreading by inserting an insulating SiO2 layer between the epitaxial layer and the p-pad electrode. It was also found that we can enhance light output intensity by 22%. Furthermore, it was found that 20 mA forward voltage only increased slightly from 3.32 to 3.37 V with the insertion of the SiO2 layer. The reliability of the proposed LED is also good. (c) 2007 The Electrochemical Society.

引用

页码：H175 / H177

页数：3

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