Design and optimization of high-performance slot-microring Si-photodetector based on internal photoemission effect

This paper presents the design and optimization of a microring resonator enhanced-internal photoemission effect-photodetectors (MRRE-IPE-PDs) suitable for optical communication. Two PD configurations are considered: the first consists of an MRR that is partially surrounded by a nanolayer of silicide with a single Schottky barrier on p-Si MRR; and the second consists of a silicide film buried in the width midpoints of a Si based MRR where photoemission occurs over the two Schottky barriers. Several silicides are considered for the stripe (PtSi, Pd2Si, TaSi2 and CoSi2). The important features of the device, such as quantum efficiency (QE), responsivity, CW sensitivity and dark current are discussed and the trade-off between 3 dB bandwidth and QE are analyzed for nanoscaled absorption layer. In this regard, some design curves are presented for the optimized MRRE-IPE-PDs. Additionally, this paper reveals substantial improvement via comparisons with QE and responsivity measurements reported in the literature. Bandwidth-efficiency product of 61-71 GHz, responsivities of 0.8-0.9 and QE of 64-71% and the minimum receiver sensitivity of -65 to -66 dBm are also predicted for single and double Schottky barriers, respectively.