Study on the electrical and optical properties of ITO and AZO thin film by oxygen gas flow rate

被引：29

作者：

Kim, Sang-Mo ^{[1
]}

Rim, You-Seung ^{[1
]}

Keum, Min-Jong ^{[2
]}

Kim, Kyung-Hwan ^{[1
]}

机构：

[1] Kyungwon Univ, Dept Elect Engn, Songnam 461701, Gyunggi Do, South Korea

[2] Ctr Adv Plasma Surface Technol, Suwon, South Korea

来源：

JOURNAL OF ELECTROCERAMICS | 2009年 / 23卷 / 2-4期

关键词：

AZO; ITO; FTS; TCO; ZINC-OXIDE FILMS; MULTILAYER FILMS; TRANSPARENT;

D O I：

10.1007/s10832-008-9452-z

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Transparent conductive oxide (TCO) thin films such as tin doped indium oxide (ITO), zinc doped indium oxide (IZO) and Al doped zinc oxide (AZO) have been widely used as transparent electrode for display. ITO and AZO thin films for display was prepared by the facing targets sputtering (FTS) system. The FTS method is called a plasma-free sputter method because the substrate is located apart from plasma. This system can deposit the thin film with low bombardment by high energetic particles in plasma such as gamma-electrons, negative ions and reflected Ar atoms. ITO and AZO thin films were deposited on glass substrate at room temperature with oxygen gas flow rate and input power. And the electrical, structural and optical properties of the thin films were investigated. As a result, the resistivity of ITO, AZO thin film is 6 x 10(-4) Omega cm, 1 x 10(-3) Omega cm, respectively. And the optical transmittance of as-deposited thin films is over 80% at visible range.

引用

页码：341 / 345

页数：5

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