On-chip decoupling capacitance with high dielectric constant and strength using SrTiO3 thin films electron-cyclotron-resonance-sputtered at 400 degrees C

It is shown that SrTiO3 thin (100 nm) film electron-cyclotron-resonance-sputtered at 400 degrees C has a good time dependent dielectric breakdown (TDDB) characteristic, a high dielectric constant, and high dielectric strength. Extrapolation of TDDB data suggests that the lifetime of the films can be estimated to be 10 years at an electric field of 2 MV/cm. These electrical properties and process parameters imply the possibility of dielectrics of on-chip decoupling capacitors. The deposition and annealing temperatures (both 400 degrees C) of this film satisfy the temperature requirement of aluminum interconnect processing in the fabrication of standard complementary metal oxide silicon large-scale integrated circuits.