Structural and magnetic properties of two-dimensional layered BiFeO3 from first principles

被引:16
|
作者
Liu, Chao [1 ,2 ,3 ,4 ]
Zhao, Guodong [1 ,2 ]
Hu, Tao [1 ,2 ]
Bellaiche, L. [3 ,4 ]
Ren, Wei [1 ,2 ]
机构
[1] Shanghai Univ, Phys Dept, State Key Lab Adv Special Steel, Mat Genome Inst, Shanghai 200444, Peoples R China
[2] Shanghai Univ, Int Ctr Quantum & Mol Struct, Shanghai Key Lab High Temp Superconductors, Shanghai 200444, Peoples R China
[3] Univ Arkansas, Phys Dept, Fayetteville, AR 72701 USA
[4] Univ Arkansas, Inst Nanosci & Engn, Fayetteville, AR 72701 USA
基金
中国国家自然科学基金;
关键词
CRYSTAL; FERROMAGNETISM; CARBON; SE;
D O I
10.1103/PhysRevB.103.L081403
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Using first-principles calculations, we predict a unique BiFeO3 (BFO) phase, which is coined I-BFO, with layered characteristics based on the ilmenite structure. The interactions between interlayer bismuth atoms make it easy to exfoliate monolayer BFO with a configuration in which Bi ions are above and below two-dimensional (2D) iron-oxygen octahedra sharing common edges. The calculated phonon spectra reveal the dynamic stability of both bulk and monolayer forms of I-BFO. Combining total energy computation and crystal structure search, we corroborate that the I-BFO monolayer maintains the lowest-energy ground state, as compared to other 2D BFO exfoliations. We also discover that monolayer I-BFO is a robust antiferromagnetic material with a Neel temperature (T-N) of 4 K in the fully relaxed case. Such T-N can be prominently improved by strain, for example, T-N = 25 K at 6% tension. Furthermore, our electronic structure calculations with PBE and hybrid HSE functionals show the I-BFO monolayer to be an indirect-gap semiconductor. Finally, we indicate that other ternary ABO(3) compounds also have the potential to produce layered materials from the ilmenite structure. This work thus provides guidance to explore unconventional layered materials, and further broadens the application of BFO and other promising ilmenite oxides in two dimensions.
引用
收藏
页数:6
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