Localization of excitons in weakly disordered semiconductor structures: A model study

被引:2
|
作者
Gogh, N. [1 ,2 ]
Thomas, P. [1 ,2 ]
Kuznetsova, I. [3 ]
Meier, T. [3 ]
Varga, I. [4 ]
机构
[1] Univ Marburg, Dept Phys, D-35032 Marburg, Germany
[2] Univ Marburg, Ctr Mat Sci, D-35032 Marburg, Germany
[3] Univ Gesamthsch Paderborn, Fak Nat Wissensch, Dept Phys, D-33098 Paderborn, Germany
[4] Budapesti Muszaki & Gazdasagtud Egyet, Fizikai Intezet, H-1111 Budapest, Hungary
关键词
Disordered semiconductor heterostructures; excitons; localizations; Fano-coupling; FOURIER-TRANSFORM SPECTROSCOPY; SIGNATURES;
D O I
10.1002/andp.200910382
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Localization of the center-of-mass (com) motion of an exciton in a disordered semiconductor structure is studied theoretically by focusing on nonlinear optical spectroscopy. A one-dimensional tight-binding model with diagonal disorder is applied and the Coulomb interaction is treated consistently. In the ordered situation the center-of-mass momentum (K) selection rule leads to only the lowest transition for K = 0. The break down of the com-K-selection rule produces the well known asymmetric excitonic lines of disordered semiconductors. The coupling between the lowest dominant transition to this modified com-continuum yields Fano-like features in the nonlinear spectra. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
引用
收藏
页码:905 / 909
页数:5
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