Surface treatment and profile characterization of p-type graded band gap AlGaN material for preparing high performance photocathode

被引：16

作者：

Fu, Xiaoqian ^{[1
]}

Li, Yang ^{[1
]}

Li, Zhiming ^{[1
]}

Zhang, ChunWei ^{[1
]}

Wang, Xiaohui ^{[2
]}

机构：

[1] Univ Jinan, Sch Informat Sci & Engn, Jinan 250022, Peoples R China

[2] Univ Elect Sci & Technol, Sch Optoelect Informat, Chengdu 610054, Peoples R China

来源：

APPLIED SURFACE SCIENCE | 2017年 / 416卷

基金：

中国国家自然科学基金;

关键词：

ELECTRONIC-PROPERTIES; ALN;

D O I：

10.1016/j.apsusc.2017.04.102

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Ar+ sputtering was applied for exploring the graded band gap profile and the effectiveness of surface contaminations removal, especially the oxide, of the AlGaN material for preparing high performance photocathodes. The X-ray photoelectron spectroscopy scan(XPS) and spectral curves fitting indicated that after conventional chemical cleaning, there were still large amount of carbon and oxygen on surface, where the oxide mainly included gallium oxide and aluminum oxide. After Ar+ sputtering for 0.5 min and 1 min, these carbon and oxygen were both completely removed from surface and the proportion of Al changed from original 29.8% to 36.7% and 37.8%, respectively, more suitable to the solar blind detection. The variation trend of Al and Ga from surface to bulk confirmed the graded band gap profile of this AlGaN material, which would introduce built-in electric field for preparing high performance photocathode. (C) 2017 Elsevier B.V. All rights reserved.

引用

页码：385 / 389

页数：5

共 31 条

[1] Solar-blind UV photocathodes based on AlGaN heterostructures with a 300- to 330-nm spectral sensitivity threshold [J].

Ainbund, M. R. ;

Alekseev, A. N. ;

Alymov, O. V. ;

Jmerik, V. N. ;

Lapushkina, L. V. ;

Mizerov, A. M. ;

Ivanov, S. V. ;

Pashuk, A. V. ;

Petrov, S. I. .

TECHNICAL PHYSICS LETTERS, 2012, 38 (05) :439-442

[2] UV photoemission study of heteroepitaxial AlGaN films grown on 6H-SiC [J].

Benjamin, MC ;

Bremser, MD ;

Weeks, TW ;

King, SW ;

Davis, RF ;

Nemanich, RJ .

APPLIED SURFACE SCIENCE, 1996, 104 :455-460

[3] Chemisorption of H2O on GaN(0001) [J].

Bermudez, VM ;

Long, JP .

SURFACE SCIENCE, 2000, 450 (1-2) :98-105

[4] The dependence of the structure and electronic properties of wurtzite GaN surfaces on the method of preparation [J].

Bermudez, VM ;

Koleske, DD ;

Wickenden, AE .

APPLIED SURFACE SCIENCE, 1998, 126 (1-2) :69-82

[5] AlxGa1-xN-based deep-ultraviolet 320 x 256 focal plane array [J].

Cicek, Erdem ;

Vashaei, Zahra ;

Huang, Edward Kwei-wei ;

McClintock, Ryan ;

Razeghi, Manijeh .

OPTICS LETTERS, 2012, 37 (05) :896-898

[6] Analysis of GaN cleaning procedures [J].

Diale, M ;

Auret, FD ;

van der Berg, NG ;

Odendaal, RQ ;

Roos, WD .

APPLIED SURFACE SCIENCE, 2005, 246 (1-3) :279-289

[7] In-situ multi-information measurement system for preparing gallium nitride photocathode [J].

Fu Xiao-Qian ;

Chang Ben-Kang ;

Qian Yun-Sheng ;

Zhang Jun-Ju .

CHINESE PHYSICS B, 2012, 21 (03)

[8] Photoemission of graded-doping GaN photocathode [J].

Fu Xiao-Qian ;

Chang Ben-Kang ;

Wang Xiao-Hui ;

Li Biao ;

Du Yu-Jie ;

Zhang Jun-Ju .

CHINESE PHYSICS B, 2011, 20 (03)

[9] Optimizing GaN photocathode structure for higher quantum efficiency [J].

Fu, Xiaogian ;

Wang, Xiaohui ;

Yang, Yongfu ;

Chang, Benkang ;

Du, Yujie ;

Zhang, Junju ;

Fu, Rongguo .

OPTIK, 2012, 123 (09) :765-768

[10] The possibly important role played by Ga2O3 during the activation of GaN photocathode [J].

Fu, Xiaoqian ;

Wang, Honggang ;

Zhang, Junju ;

Li, Zhiming ;

Cui, Shiyao ;

Zhang, Lejuan .

JOURNAL OF APPLIED PHYSICS, 2015, 118 (06)

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