Heavy Ion and High Energy Proton-Induced Single Event Transients in 90 nm Inverter, NAND and NOR Gates

被引：24

作者：

Cannon, Ethan H. ^{[1
]}

Cabanas-Holmen, Manuel ^{[1
]}

机构：

[1] Boeing Co, Seattle, WA 98124 USA

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2009年 / 56卷 / 06期

关键词：

Pulse width; radiation event; radiation hardened by design (RHBD); single event transient (SET); PULSE-WIDTHS; PROPAGATION;

D O I：

10.1109/TNS.2009.2034377

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We measure heavy ion and proton-induced SETs in inverters, and NAND and NOR gates from a 90 nm RHBD library. NAND and NOR gates have higher SET cross section and generate wider pulses than inverters.

引用

页码：3511 / 3518

页数：8

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