Control over the crystalline state of sapphire

被引：156
作者：
Juodkazis, Saulius
Nishimura, Koichi
Misawa, Hiroaki
Ebisui, Takahiro
Waki, Ryoichi
Matsuo, Shigeki
Okada, Tatsuya
机构：
[1] Hokkaido Univ, CREST JST, Kita Ku, Sapporo, Hokkaido 0010021, Japan
[2] Hokkaido Univ, Res Inst Elect Sci, Kita Ku, Sapporo, Hokkaido 0010021, Japan
[3] Univ Tokushima, Dept Ecosyst Engn, Tokushima 7708506, Japan
[4] Univ Tokushima, Dept Mech Engn, Tokushima 7708506, Japan
来源：
ADVANCED MATERIALS | 2006年 / 18卷 / 11期
关键词：
D O I：
10.1002/adma.200501837
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
Amorphous regions in sapphire with sub-micrometer 3D resolution have been produced at the focus of a single femtosecond laser pulse. Crystalline-to-amorphous and amorphous-to-polycrystalline transitions (crystalline and amorphous regions are marked C and A in the HRTEM image) are induced by single- and multi-pulse irradiation, respectively. The wet-etching selectivity for the amorphous phase is significantly greater than that for the crystalline phase in aqueous HF.
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页码：1361 / +
页数：5
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