Room-temperature terahertz emission from nanometer field-effect transistors

被引：125
|
作者：
Dyakonova, N [1 ]
El Fatimy, A
Lusakowski, J
Knap, W
Dyakonov, MI
Poisson, MA
Morvan, E
Bollaert, S
Shchepetov, A
Roelens, Y
Gaquiere, C
Theron, D
Cappy, A
机构：
[1] Univ Montpellier 2, Etud Semicond Grp, CNRS, UMR 5650, F-34095 Montpellier, France
[2] Univ Montpellier 2, Lab Phys Theor & Astrophys, F-34095 Montpellier, France
[3] Thales Res & Technol, F-91404 Orsay, France
[4] CNRS, UMR 8520, Inst Elect & Microelect Nord, F-59655 Villeneuve Dascq, France
来源：
APPLIED PHYSICS LETTERS | 2006年 / 88卷 / 14期
关键词：
Electric potential - Field effect transistors - Gates (transistor) - Natural frequencies - Radiation effects - Spectrum analysis - Thermal effects;
D O I：
10.1063/1.2191421
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Room-temperature generation of terahertz radiation in nanometer gate length InAlAs/InGaAs and AlGaN/GaN high-mobility transistors is reported. A well-defined source-drain voltage threshold for the emission exists, which depends on the gate bias. Spectral analysis of the emitted radiation is presented. The highest emission power emitted from a single device reached 0.1 mu W.
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页数：3
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