Drive Loss Analysis and Comparison of Capacitor-Less Gate Drive Circuit for Gan FETs with Capacitor Type Gate Drive Circuits

Galluim-Nitride(GaN) power devises have a potential to achieve higher efficiency operation than Silicon(Si) ones such as MOS FETs and IGBTs. However, the characteristic of GaN FETs is different from MOS FETs, and thus, there is the possibility that GaN-based power electronics circuits shows more losses than Si-based ones. To resolve this problem, some of the gate drive circuits for GaN FETs are proposed and one of them is called capacitor-less gate drive circuit. This paper presents drive losses analysis of the capacitor-less gate drive circuit. Furthermore, the drive losses of the capacitor-less gate drive circuit are compared with capacitor-type gate drive circuit experimentally.