Backcontact CdSe/CdTe windowless solar cells

被引:21
作者
Kim, D. U. [1 ,2 ]
Hangarter, C. M. [1 ]
Debnath, R. [1 ,3 ]
Ha, J. Y. [1 ,4 ]
Beauchamp, C. R. [1 ]
Widstrom, M. D. [1 ,3 ]
Guyer, J. E. [1 ]
Nguyen, N. [5 ]
Yoo, B. Y. [2 ,6 ]
Josell, D. [1 ]
机构
[1] NIST, Div Met, Mat Measurement Lab, Gaithersburg, MD 20899 USA
[2] Hanyang Univ, Dept Bionanotechnol, Ansan 425791, South Korea
[3] Univ Maryland, Dept Mat Sci & Engn, College Pk, MD 20742 USA
[4] Univ Maryland, Inst Res Elect & Appl Phys, College Pk, MD 20742 USA
[5] NIST, Phys Measurement Lab, Semicond & Dimens Metrol Div, Gaithersburg, MD 20899 USA
[6] Hanyang Univ, Dept Mat Engn, Ansan 425791, South Korea
关键词
Backcontact; CdSe; CdTe; Photovoltaic; Solar cells; ELECTRODEPOSITED CDTE; CATHODIC DEPOSITION; LOW-COST; FILMS; PHOTOVOLTAICS; CHALLENGES; ARRAY;
D O I
10.1016/j.solmat.2012.11.007
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
This paper details the fabrication and properties of CdSe/CdTe thin film photovoltaic devices with a dual back contact geometry. Device fabrication involves CdSe electrodeposition on one of two interdigitated electrodes on a pre-patterned substrate followed by CdTe electrodeposition over the entire structure so that both electrodes are behind the active portion of the device. In contrast to traditional planar devices, illumination is on the electrode-free CdTe surface rather than through a window layer. Like previously detailed back-contact devices for other materials systems, all light that impinges on the device thus reaches the CdTe absorber, the surface being free of metallic electrodes, transparent conductors and window layers. Device efficiency of 2% under simulated air mass 1.5 illumination for feature spacing of 2 mu m is similar to that of three-dimensionally patterned CdS/CdTe devices detailed by other groups With similar feature height but much smaller 0.5 mu m spacing. Published by Elsevier B.V.
引用
收藏
页码:246 / 253
页数:8
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