Effect of pressure on variable range hopping in amorphous semiconductors

被引：0

作者：

Nosaka, H ^{[1
]}

Katayama, Y ^{[1
]}

Tsuji, K ^{[1
]}

机构：

[1] KEIO UNIV,DEPT PHYS,KOHOKU KU,YOKOHAMA,KANAGAWA 223,JAPAN

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1996年 / 200卷

关键词：

D O I：

暂无

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The electric conductivity and thermo-electric power were measured under pressure up to 10 GPa and in the temperature range from 100 K to 300 K in evaporated amorphous Ge. The temperature dependence of conductivity is found to be well described by sigma = sigma(0)(T/T-0)(n) with 6 less than or equal to n less than or equal to 7 in the pressure rang to 6 GPa. The value of n varies with increasing pressure. The pressure coefficient, dln n/dP, is about 3.0 X 10(-2) GPa(-1) below; 1.6 GPa and -3.3 X 10(-2) GPa(-1) above 1.6 GPa. The thermopower at room temperature decreases with increasing pressure, Results are discussed from several hopping conduction models.

引用

页码：218 / 221

页数：4

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