Efficient luminescence from porous silicon

被引：0

作者：

Daami, A ^{[1
]}

Bremond, G ^{[1
]}

Stalmans, L ^{[1
]}

Poortmans, J ^{[1
]}

机构：

[1] Inst Natl Sci Appl, UMR CNRS 5511, Phys Mat Lab, F-69621 Villeurbanne, France

来源：

LIGHT EMISSION FROM SILICON: PROGRESS TOWARDS SI-BASED OPTOELECTRONICS | 1999年 / 77卷

关键词：

porous silicon; photoluminescence; passivation;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Photoluminescence measurements are carried out on porous silicon layers. We show the enhancement and stabilization of the luminescence when depositing a silicon nitride layer on top of porous layers. We also demonstrate that direct- and remote-plasma nitridation are good ways to reduce the ageing effect of porous silicon layers due to a passivation of dangling bonds. (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：169 / 172

页数：4

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