Efficient luminescence from porous silicon

被引:0
|
作者
Daami, A [1 ]
Bremond, G [1 ]
Stalmans, L [1 ]
Poortmans, J [1 ]
机构
[1] Inst Natl Sci Appl, UMR CNRS 5511, Phys Mat Lab, F-69621 Villeurbanne, France
关键词
porous silicon; photoluminescence; passivation;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Photoluminescence measurements are carried out on porous silicon layers. We show the enhancement and stabilization of the luminescence when depositing a silicon nitride layer on top of porous layers. We also demonstrate that direct- and remote-plasma nitridation are good ways to reduce the ageing effect of porous silicon layers due to a passivation of dangling bonds. (C) 1999 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:169 / 172
页数:4
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