Photoluminescence measurements are carried out on porous silicon layers. We show the enhancement and stabilization of the luminescence when depositing a silicon nitride layer on top of porous layers. We also demonstrate that direct- and remote-plasma nitridation are good ways to reduce the ageing effect of porous silicon layers due to a passivation of dangling bonds. (C) 1999 Elsevier Science B.V. All rights reserved.
机构:
Far Eastern State Transport Univ, Khabarovsk 680021, RussiaFar Eastern State Transport Univ, Khabarovsk 680021, Russia
Yan, D. T.
Galkin, N. G.
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机构:
Russian Acad Sci, Far East Branch, Inst Automat & Control Proc, Vladivostok 690041, RussiaFar Eastern State Transport Univ, Khabarovsk 680021, Russia
Galkin, N. G.
ASIA-PACIFIC CONFERENCE ON FUNDAMENTAL PROBLEMS OF OPTO- AND MICROELECTRONICS,
2017,
10176