A New Simulation Model for Nanowire-CMOS Inverter Circuit

被引：0
|
作者：
Hashim, Yasir [1 ]
机构：
[1] Univ Malaysia Pahang, Fac Engn Technol, Lebuhraya Tun Razak 263002, Pahang, Malaysia
来源：
2016 INTERNATIONAL CONFERENCE ON ADVANCED INFORMATICS - CONCEPTS, THEORY AND APPLICATION (ICAICTA) | 2016年
关键词：
CMOS; nanowire; transistor; inverter;
D O I：
暂无
中图分类号：
TP [自动化技术、计算机技术];
学科分类号：
0812 ;
摘要：
This This paper is to suggest a new model for predicting the static characteristics of nanowire-CMOS (NW-CMOS) inverter. This model depends on experimental (or simulated) output characteristics of load and driver transistors separately as an input data. This model used in this research to investigate the effect of length (L), oxide thickness (Tox) and numbers of nanowires in P and N-channel SiNWT on the NW-CMOS inverter output and current characteristics. This study used MuGFET simulation tool to produce the output characteristics of SiNWT which used as input to a designed MATLAB software to calculate the characteristics of NW-CMOS. The output (Vout-Vin) and current (Iout-Vin) characteristics that calculated shows excellent behaviors for digital applications.
引用
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页数：6
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