Copper wafer bonding

被引：173
作者：
Fan, A [1 ]
Rahman, A [1 ]
Reif, R [1 ]
机构：
[1] MIT, Microsyst Technol Labs, Cambridge, MA 02139 USA
来源：
ELECTROCHEMICAL AND SOLID STATE LETTERS | 1999年 / 2卷 / 10期
关键词：
D O I：
10.1149/1.1390894
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
Silicon wafers, coated with 300 nm evaporated copper, were successfully bonded at 450 degrees C for 30 min with a postbonding anneal in N-2 for 30 min. The postbonding anneal was required for successful bonding, but the annealing temperature did not influence the bond strength from 400 to 620 degrees C. The inclusion of a tantalum diffusion barrier for Cu did not affect the bonding strength or the bonding temperature. (C) 1999 The Electrochemical Society. S1099-0062(99)02-010-6. All rights reserved.
引用
收藏
页码：534 / 536
页数：3
相关论文
共 11 条
  • [1] Abou-Samra SJ, 1998, 1998 INTERNATIONAL SYMPOSIUM ON LOW POWER ELECTRONICS AND DESIGN - PROCEEDINGS, P54, DOI 10.1109/LPE.1998.708155
  • [2] CHANG, 1998, P 1998 INT S LOW POW, P411
  • [3] CHANG CY, 1996, ULSI TECHNOLOGY, P673
  • [4] den Besten C., 1992, Proceedings. IEEE Micro Electro Mechanical Systems. An Investigation of Micro Structures, Sensors, Actuators, Machines and Robots(Cat. No.92CH3093-2), P104, DOI 10.1109/MEMSYS.1992.187699
  • [5] DEREUS R, 1997, SOLID STATE SENS ACT, V1, P661
  • [6] Hayashi Y., 1991, International Electron Devices Meeting 1991. Technical Digest (Cat. No.91CH3075-9), P657, DOI 10.1109/IEDM.1991.235336
  • [7] TANTALUM AS A DIFFUSION BARRIER BETWEEN COPPER AND SILICON - FAILURE MECHANISM AND EFFECT OF NITROGEN ADDITIONS
    HOLLOWAY, K
    FRYER, PM
    CABRAL, C
    HARPER, JME
    BAILEY, PJ
    KELLEHER, KH
    [J]. JOURNAL OF APPLIED PHYSICS, 1992, 71 (11) : 5433 - 5444
  • [8] Kuhn SA, 1995, INTERNATIONAL ELECTRON DEVICES MEETING, 1995 - IEDM TECHNICAL DIGEST, P249, DOI 10.1109/IEDM.1995.499189
  • [9] Three dimensional metallization for vertically integrated circuits (invited lecture)
    Ramm, P
    Bollmann, D
    Braun, R
    Buchner, R
    Cao-Minh, U
    Engelhardt, M
    Errmann, G
    Grassl, T
    Hieber, K
    Hubner, H
    Kawala, G
    Kleiner, M
    Klumpp, A
    Kuhn, S
    Landesberger, C
    Lezec, H
    Muth, M
    Pamler, W
    Popp, R
    Renner, E
    Ruhl, G
    Sanger, A
    Scheler, U
    Schertel, A
    Schmidt, C
    Schwarzl, S
    Weber, J
    Weber, W
    [J]. MICROELECTRONIC ENGINEERING, 1997, 37-8 (1-4) : 39 - 47
  • [10] SUGA T, 1997, P 1997 IEEE IEMT IMC, P176
12