Copper wafer bonding

被引：173

作者：

Fan, A ^{[1
]}

Rahman, A ^{[1
]}

Reif, R ^{[1
]}

机构：

[1] MIT, Microsyst Technol Labs, Cambridge, MA 02139 USA

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 1999年 / 2卷 / 10期

关键词：

D O I：

10.1149/1.1390894

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Silicon wafers, coated with 300 nm evaporated copper, were successfully bonded at 450 degrees C for 30 min with a postbonding anneal in N-2 for 30 min. The postbonding anneal was required for successful bonding, but the annealing temperature did not influence the bond strength from 400 to 620 degrees C. The inclusion of a tantalum diffusion barrier for Cu did not affect the bonding strength or the bonding temperature. (C) 1999 The Electrochemical Society. S1099-0062(99)02-010-6. All rights reserved.

引用

页码：534 / 536

页数：3

共 11 条

[1]

Abou-Samra SJ, 1998, 1998 INTERNATIONAL SYMPOSIUM ON LOW POWER ELECTRONICS AND DESIGN - PROCEEDINGS, P54, DOI 10.1109/LPE.1998.708155

[2]

CHANG, 1998, P 1998 INT S LOW POW, P411

[3]

CHANG CY, 1996, ULSI TECHNOLOGY, P673

[4]

den Besten C., 1992, Proceedings. IEEE Micro Electro Mechanical Systems. An Investigation of Micro Structures, Sensors, Actuators, Machines and Robots(Cat. No.92CH3093-2), P104, DOI 10.1109/MEMSYS.1992.187699

[5]

DEREUS R, 1997, SOLID STATE SENS ACT, V1, P661

[6]

Hayashi Y., 1991, International Electron Devices Meeting 1991. Technical Digest (Cat. No.91CH3075-9), P657, DOI 10.1109/IEDM.1991.235336

[7] TANTALUM AS A DIFFUSION BARRIER BETWEEN COPPER AND SILICON - FAILURE MECHANISM AND EFFECT OF NITROGEN ADDITIONS [J].

HOLLOWAY, K ;

FRYER, PM ;

CABRAL, C ;

HARPER, JME ;

BAILEY, PJ ;

KELLEHER, KH .

JOURNAL OF APPLIED PHYSICS, 1992, 71 (11) :5433-5444

[8]

Kuhn SA, 1995, INTERNATIONAL ELECTRON DEVICES MEETING, 1995 - IEDM TECHNICAL DIGEST, P249, DOI 10.1109/IEDM.1995.499189

[9] Three dimensional metallization for vertically integrated circuits (invited lecture) [J].

Ramm, P ;

Bollmann, D ;

Braun, R ;

Buchner, R ;

Cao-Minh, U ;

Engelhardt, M ;

Errmann, G ;

Grassl, T ;

Hieber, K ;

Hubner, H ;

Kawala, G ;

Kleiner, M ;

Klumpp, A ;

Kuhn, S ;

Landesberger, C ;

Lezec, H ;

Muth, M ;

Pamler, W ;

Popp, R ;

Renner, E ;

Ruhl, G ;

Sanger, A ;

Scheler, U ;

Schertel, A ;

Schmidt, C ;

Schwarzl, S ;

Weber, J ;

Weber, W .

MICROELECTRONIC ENGINEERING, 1997, 37-8 (1-4) :39-47

[10]

SUGA T, 1997, P 1997 IEEE IEMT IMC, P176

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