New dual-material SG nanoscale MOSFET: Analytical threshold-voltage model

被引：70
|
作者：
Kumar, MJ [1 ]
Orouji, AA
Dhakad, H
机构：
[1] Indian Inst Technol, Dept Elect Engn, New Delhi 110016, India
[2] Semnan Univ, Dept Elect Engn, Semnan 35195363, Iran
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2006年 / 53卷 / 04期
关键词：
device scaling; insulated gate field effect transistor; short-channel effects (SCEs); surrounding-gate (SGT) MOSFET; threshold voltage; two-dimensional (2-D) modeling;
D O I：
10.1109/TED.2006.870422
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A new analytical model for the surface potential and threshold voltage of a surrounding-gate MOSFET with dual-material gate is presented to investigate the short-channel effects. The model results accurately predict the threshold-voltage "rolloff" for channel lengths even less than 90 urn. The accuracy of the model results is verified using two-dimensional simulation.
引用
收藏
页码：920 / 923
页数：4
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