Formation of nanocrystals embedded in a silicon nitride film at a low temperature (≤200 °C)

被引：10
|
作者：
Lee, Kyoung-Min [1 ]
Kim, Tae-Hwan [1 ]
Hong, Wan-Shick [1 ]
机构：
[1] Univ Seoul, Dept Nano Sci & Technol, Seoul 130743, South Korea
来源：
SCRIPTA MATERIALIA | 2008年 / 59卷 / 11期
关键词：
Silicon nanocrystals; Low temperature process; Catalytic CVD;
D O I：
10.1016/j.scriptamat.2008.08.006
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Silicon-rich silicon nitride films with embedded silicon nanocrystals (Si NCs) were fabricated successfully on plastic substrates at a low temperature by catalytic chemical vapor deposition. A mixture of SiH4, NH3 and H-2 was used as a source gas. Formation of the silicon nanocrystals was analyzed by photoluminescence spectra and was confirmed by transmission electron microscopy. The formation of Si NCs required an H-2/SiH4 mixture ratio that was higher than four. (c) 2008 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
引用
收藏
页码：1190 / 1192
页数：3
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