Electrical Characterization and Microstructures of La-doped Bi4Ti3O12 thin films

被引：0

作者：

Mei, X. A. ^{[1
]}

Chen, M. ^{[1
]}

Liu, R. F. ^{[1
]}

Sun, Y. H. ^{[1
]}

Liu, J. ^{[1
]}

机构：

[1] Hunan Inst Sci & Technol, Sch Phys, Yueyang 414000, Peoples R China

来源：

CHINESE CERAMICS COMMUNICATIONS II | 2012年 / 412卷

关键词：

Ferroelectric; Dielectric; Films; BISMUTH TITANATE;

D O I：

10.4028/www.scientific.net/AMR.412.318

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

La-doped bismuth titanate (Bi4-xLaxTi3O12: BLT) and pure Bi4Ti3O12 (BIT) thin films with random orientation were fabricated on Pt/Ti/SiO2/Si substrates by rf magnetron sputtering technique. These samples had polycrystalline Bi-layered perovskite structure without preferred orientation, and consisted of well developed rod-like grains with random orientation. La-doping into BIT caused a large shift of the Curie temperature (T-C) from 675 degrees C to lower temperature and a improvement in dielectric property. The experimental results indicated that La doping into BIT also result in a remarkable improvement in ferroelectric property. The P-r and the E-c values of the BLT film with x=0.75 were 20 mu C/cm(2) and 82kV/cm, respectively.

引用

页码：318 / 321

页数：4

共 9 条

[1] The improvement in ferroelectric performance of (Bi3.15Nd0.85)4Ti3O12 films by the addition of hydrogen peroxide in a spin-coating solution [J].

Chang, Yi-Chun ;

Kuo, Dong-Hau .

THIN SOLID FILMS, 2006, 515 (04) :1683-1687

[2] Ferroelectric properties of bismuth titanate niobate Bi7Ti4NbO21 thin film [J].

Kim, CJ ;

Hong, SG .

THIN SOLID FILMS, 2000, 365 (01) :58-60

[3] Device physics of ferroelectric thin-film memories [J].

Scott, JF .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1999, 38 (4B) :2272-2274

[4] Preparation of lanthanum doped Bi4Ti3O12 ceramics by the polymeric precursor method [J].

Simoes, A. Z. ;

Quinelato, C. ;

Ries, A. ;

Stojanovic, B. D. ;

Longo, E. ;

Varela, J. A. .

MATERIALS CHEMISTRY AND PHYSICS, 2006, 98 (2-3) :481-485

[5]

Sook Y.I., 1997, MAT RES B, V32, P1349

[6] Approach for enhanced polarization of polycrystalline bismuth titanate films by Nd3+/V5+ cosubstitution [J].

Uchida, H ;

Yoshikawa, H ;

Okada, I ;

Matsuda, H ;

Iijima, T ;

Watanabe, T ;

Kojima, T ;

Funakubo, H .

APPLIED PHYSICS LETTERS, 2002, 81 (12) :2229-2231

[7] Electrical conductivity of strontium bismuth titanate under controlled oxygen partial pressure [J].

Voisard, C ;

Damjanovic, D ;

Setter, N .

JOURNAL OF THE EUROPEAN CERAMIC SOCIETY, 1999, 19 (6-7) :1251-1254

[8] Structural and optical characterization of Bi4Ti3O12 thin films prepared by metallorganic solution deposition technique [J].

Wang, XS ;

Zhai, JW ;

Zhang, LY ;

Yao, X .

INFRARED PHYSICS & TECHNOLOGY, 1999, 40 (01) :55-60

[9] Effect of cosubstitution of La and V in Bi4Ti3O12 thin films on the low-temperature deposition [J].

Watanabe, T ;

Funakubo, H ;

Osada, M ;

Noguchi, Y ;

Miyayama, M .

APPLIED PHYSICS LETTERS, 2002, 80 (01) :100-102

← 1 →