Studies of the reverse read method and second-bit effect of 2-bit/cell nitride-trapping device by quasi-two-dimensional model

被引：38

作者：

Lue, HT ^{[1
]}

Hsu, TH ^{[1
]}

Wu, MT ^{[1
]}

Hsieh, KY ^{[1
]}

Liu, R ^{[1
]}

Lu, CY ^{[1
]}

机构：

[1] Macronix Int Co Ltd, Emerging Cent Lab, Hsinchu 300, Taiwan

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2006年 / 53卷 / 01期

关键词：

2-bit/cell; local drain-induced barrier lowering (DIBL); NROM; reverse read method; second-bit effect; short channel effect;

D O I：

10.1109/TED.2005.860644

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The reverse read method and second-bit effect of the 2-bit/cell nitride-trapping device are comprehensively studied by a quasi-two-dimensional (2-D) model. Based on this model, analytical equations are derived to simulate the surface potential of the device with locally injected electrons. This model indicates that the reverse read method exploits the local drain-induced barrier lowering (DIBL) effect that reduces the potential barrier produced by the locally injected electrons. The experimental results of the two-region behavior of second-bit effect can be well explained and simulated by this analytical model. Two-dimensional numerical calculations are also carried out to verify these analytical equations. The impact of short-channel effect on the second-bit effect is also examined.

引用

页码：119 / 125

页数：7

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