Photoresponse from single upright-standing ZnO nanorods explored by photoconductive AFM

被引:26
作者
Beinik, Igor [1 ]
Kratzer, Markus [1 ]
Wachauer, Astrid [1 ]
Wang, Lin [1 ]
Piryatinski, Yuri P. [2 ]
Brauer, Gerhard [3 ]
Chen, Xin Yi [4 ]
Hsu, Yuk Fan [4 ]
Djurisic, Aleksandra B. [4 ]
Teichert, Christian [1 ]
机构
[1] Univ Leoben, Inst Phys, Leoben, Austria
[2] Natl Acad Sci Ukraine, Inst Phys, Kiev, Ukraine
[3] Helmholtz Zentrum Dresden Rossendorf, Inst Strahlenphys, Dresden, Germany
[4] Univ Hong Kong, Dept Phys, Hong Kong, Hong Kong, Peoples R China
基金
奥地利科学基金会;
关键词
AFM; nanorods; photoconductive AFM; photoconductivity; ZnO; ATOMIC-FORCE MICROSCOPY; SOLAR-CELLS; MICROCRYSTALLINE SILICON; NANOWIRE; SURFACE; FILMS; NANOSTRUCTURES; PHOTODESORPTION; SPECTROSCOPY; TRANSPORT;
D O I
10.3762/bjnano.4.21
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Background: ZnO nanostructures are promising candidates for the development of novel electronic devices due to their unique electrical and optical properties. Here, photoconductive atomic force microscopy (PC-AFM) has been applied to investigate transient photoconductivity and photocurrent spectra of upright-standing ZnO nanorods (NRs). With a view to evaluate the electronic properties of the NRs and to get information on recombination kinetics, we have also performed time-resolved photoluminescence measurements macroscopically. Results: Persistent photoconductivity from single ZnO NRs was observed for about 1800 s and was studied with the help of photocurrent spectroscopy, which was recorded locally. The photocurrent spectra recorded from single ZnO NRs revealed that the minimum photon energy sufficient for photocurrent excitation is 3.1 eV. This value is at least 100 meV lower than the band-gap energy determined from the photoluminescence experiments. Conclusion: The obtained results suggest that the photoresponse in ZnO NRs under ambient conditions originates preferentially from photoexcitation of charge carriers localized at defect states and dominates over the oxygen photodesorption mechanism. Our findings are in agreement with previous theoretical predictions based on density functional theory calculations as well as with earlier experiments carried out at variable oxygen pressure.
引用
收藏
页码:208 / 217
页数:10
相关论文
共 55 条
[21]   ZnO nanorods for solar cells: Hydrothermal growth versus vapor deposition [J].
Hsu, Y. F. ;
Xi, Y. Y. ;
Djurisic, A. B. ;
Chan, W. K. .
APPLIED PHYSICS LETTERS, 2008, 92 (13)
[22]   Supersensitive, Fast-Response Nanowire Sensors by Using Schottky Contacts [J].
Hu, Youfan ;
Zhou, Jun ;
Yeh, Ping-Hung ;
Li, Zhou ;
Wei, Te-Yu ;
Wang, Zhong Lin .
ADVANCED MATERIALS, 2010, 22 (30) :3327-3332
[23]   Persistent Photoconductivity Studies in Nanostructured ZnO UV Sensors [J].
Hullavarad, Shiva ;
Hullavarad, Nilima ;
Look, David ;
Claflin, Bruce .
NANOSCALE RESEARCH LETTERS, 2009, 4 (12) :1421-1427
[24]   Preparation and characteristics of hybrid ZnO-polymer solar cells [J].
Ji, L. W. ;
Shih, W. S. ;
Fang, T. H. ;
Wu, C. Z. ;
Peng, S. M. ;
Meen, T. H. .
JOURNAL OF MATERIALS SCIENCE, 2010, 45 (12) :3266-3269
[25]   ZnO nanowire field-effect transistor as a UV photodetector; optimization for maximum sensitivity [J].
Kim, Woong ;
Chu, Kyo Seon .
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2009, 206 (01) :179-182
[26]  
Kocka J, 2001, SOLID STATE PHENOMEN, V80-81, P213
[27]   Electrical and photovoltaic properties of self-assembled Ge nanodomes on Si(001) [J].
Kratzer, M. ;
Rubezhanska, M. ;
Prehal, C. ;
Beinik, I. ;
Kondratenko, S. V. ;
Kozyrev, Yu N. ;
Teichert, C. .
PHYSICAL REVIEW B, 2012, 86 (24)
[28]   Anion vacancies as a source of persistent photoconductivity in II-VI and chalcopyrite semiconductors [J].
Lany, S ;
Zunger, A .
PHYSICAL REVIEW B, 2005, 72 (03)
[29]   Surface-induced p-type conductivity in ZnO nanopillars investigated by scanning probe microscopy [J].
Latu-Romain, E. ;
Gilet, P. ;
Chevalier, N. ;
Mariolle, D. ;
Bertin, F. ;
Feuillet, G. ;
Perillat-Merceroz, G. ;
Ferret, P. ;
Levy, F. ;
Muret, P. ;
Chelnokov, A. .
JOURNAL OF APPLIED PHYSICS, 2010, 107 (12)
[30]   Simple fabrication of a ZnO nanowire photodetector with a fast photoresponse time [J].
Law, JBK ;
Thong, JTL .
APPLIED PHYSICS LETTERS, 2006, 88 (13)