Structural and dielectric properties of Ba0.7Sr0.3TiO3 thin films grown on thin Bi layer-coated Pt(111)/Ti/SiO2/Si substrates

被引：17

作者：

Yi, WC ^{[1
]}

Kalkur, TS

Philofsky, E

Kammerdiner, L

机构：

[1] Univ Colorado, Dept Elect & Comp Engn, Colorado Springs, CO 80933 USA

[2] Appl Ceram Res, Colorado Springs, CO 80919 USA

来源：

THIN SOLID FILMS | 2002年 / 402卷 / 1-2期

关键词：

Ba0.7Sr0.3TiO3; (BST); Bi layer; oxygen-deficient layer; bottom electrode; dielectric constant;

D O I：

10.1016/S0040-6090(01)01611-X

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this work, the growth and study of dielectric properties of Ba0.7Sr0.3TiO3 (BST) thin films grown on thin Bi layer coated Pt(111)/Ti/SiO2/Si substrates, depending on thin Bi layer thickness is reported. The BST thin film (thickness 180 nm) grown on 10-nm-thick Bi layer exhibited more improved structural and dielectric properties than that grown on bare Pt(111)/Ti/SiO2/Si substrate. The 10-nm-thick Bi layer in optimum configuration was effective for the grain growth of BST phase and suppressed the formation of the oxygen-deficient layer at the interface between the BST thin film and bottom electrode, which resulted in an increase in dielectric constant and a decrease in leakage current density of the Pt/BST thin film/Pt capacitor. (C) 2002 Elsevier Science B.V All rights reserved.

引用

页码：307 / 310

页数：4