Flexible Zinc Nitride Thin-Film Transistors Using Spin-On Glass as Gate Insulator

被引：25
作者：
Dominguez, Miguel A. [1 ]
Luis Pau, Jose [2 ]
Redondo-Cubero, Andres [2 ]
机构：
[1] Benemerita Univ Autonoma Puebla, Inst Ciencias, Ctr Invest Disposit Semicond, Puebla 72570, Mexico
[2] Univ Autonoma Madrid, Fac Ciencias, Grp Elect & Semicond, E-28049 Madrid, Spain
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2018年 / 65卷 / 03期
关键词：
Flexible devices; spin-on glass (SOG); thin-film transistors (TFTs); zinc nitride; LAYER;
D O I：
10.1109/TED.2018.2797254
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, zinc nitride (Zn3N2)-based flexible thin-film transistors (TFTs) are presented. The zinc nitride thin film is deposited by magnetron radio frequency sputtering at room temperature, while spin-on glass and aluminum were used as gate insulator and source/drain electrode, respectively. Polyethylene terephthalate is used as flexible substrate. The flexible Zn3N2 TFTs were characterized while bent to 5-mm tensile radius. The flexible TFTs exhibit an electron mobility of 3.8 cm(2)/V center dot s and an ON/OFF current ratio close to 105 after several cycles of bending and being exposed to air ambient for 30 days.
引用
收藏
页码：1014 / 1017
页数：4
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