Millimeterwave Schottky diode on grapene monolayer via asymmetric metal contacts

被引：9

作者：

Dragoman, Mircea ^{[1
]}

Deligeorgis, George ^{[2
,3
]}

Muller, Alexandru ^{[1
]}

Cismaru, Alina ^{[1
]}

Neculoiu, Dan ^{[4
]}

Konstantinidis, George ^{[5
]}

Dragoman, Daniela ^{[6
]}

Dinescu, Adrian ^{[1
]}

Comanescu, Florin ^{[1
]}

机构：

[1] Natl Inst Res & Dev Microtechnol IMT, Bucharest 023573, Romania

[2] CNRS LAAS, F-31400 Toulouse 4, France

[3] Univ Toulouse, LAAS, F-31400 Toulouse, France

[4] Politehnica Univ Bucharest, Dept Elect, Bucharest 061071, Romania

[5] Fdn Res & Technol Hellas FORTH, Iraklion 71110, Crete, Greece

[6] Univ Bucharest, Dept Phys, Bucharest 077125, Romania

来源：

JOURNAL OF APPLIED PHYSICS | 2012年 / 112卷 / 08期

关键词：

D O I：

10.1063/1.4759347

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The paper presents the experiments regarding a Schottky diode fabricated on a graphene monolayer using asymmetric metallic contacts. The current is in the mA range, which is with orders of magnitude higher than for reported Schottky diodes prepared on graphene bilayers or related graphene materials. Moreover, this device exhibits a DC controllable phase shift of more than 20 degrees in the range 40-65GHz. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4759347]

引用

页数：4

共 13 条

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