Surface morphology of GaN layer grown by plasma-assisted molecular beam epitaxy on MOCVD-grown GaN template

被引:3
作者
Ide, T [1 ]
Shimizu, M [1 ]
Kuo, J [1 ]
Jeganathan, K [1 ]
Shen, XQ [1 ]
Okumura, H [1 ]
机构
[1] Adv Ind Sci & Technol, Power Elect Res Ctr, Tsukuba, Ibaraki 3058568, Japan
来源
5TH INTERNATIONAL CONFERENCE ON NITRIDE SEMICONDUCTORS (ICNS-5), PROCEEDINGS | 2003年 / 0卷 / 07期
关键词
D O I
10.1002/pssc.200303343
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
We performed the epitaxial growth of the GaN layer on MOCVD-grown GaN templates by plasma-assisted MBE (rf-MBE). We investigated the surface morphology and the growth-mode mechanism, varying the growth condition such as the growth rate and the growth temperature. By reducing the growth rate from 0.5 mum/h to 0.2 mum/h, smooth and flat surface was achieved. The rms surface roughness of 0.2-mum/h-GaN films was smaller than that of MOCVD templates. The cause of smooth surface morphology was the restriction of the spiral growth. Moreover, by changing Ga-flux at 0.2-mum/h growth condition, we found that it was important for smooth surface morphology to grow in stoichiometric condition as well as low growth rate. (C) 2003 WILEY-VCH Verlag GmbH & Co, KGaA, Weinheim.
引用
收藏
页码:2549 / 2552
页数:4
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