IMPEDANCE MATCHING WILKINSON POWER DIVIDERS IN 0.35 μm SiGe BiCMOS TECHNOLOGY

被引：4
|
作者：
Kaymaksut, Ercan [1 ]
Gurbuz, Yasar [1 ]
Tekin, Ibrahim [1 ]
机构：
[1] Sabanci Univ, TR-34956 Istanbul, Turkey
来源：
MICROWAVE AND OPTICAL TECHNOLOGY LETTERS | 2009年 / 51卷 / 03期
关键词：
on-chip power divider; impedance matching; power amplifier;
D O I：
10.1002/mop.24159
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This article presents two miniature impedance matching Wilkinson power divider circuits in 0.35 mu m SiGe BiCMOS technology for on-chip power combining techniques for WLAN applications. The impedance matching Wilkinson power divider circuits are used as splitter/combiner for a 5.2 GHZ fully integrated class-A mode combined power amplifier. The splitter and combiner are designed to match the input and output impedances of the amplifier, respectively, so that no additional impedance matching is needed. Two fabricated impedance matching Wilkinson power divider circuits (splitter and combiner) have insertion losses better than 1.4 dB, return losses less than - 13 dB and port-to-port isolation >12 dB at 5.2 GHg (C) 2009 Wiley Periodicals, Inc. Microwave Opt Technol Lett 51: 681-685, 2009: published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.24159
引用
收藏
页码：681 / 685
页数：5
相关论文
共 50 条
  • [31] A SiGe/Si Phototransistor With High FOM of Gain* VA Using 0.35-μm BiCMOS Technology
    Xie, Hongyun
    Xiang, Yang
    Sha, Yin
    Ji, Ruilang
    Zhu, Fu
    Shen, Xiaoting
    Han, Dong
    Yang, Xiaoxiong
    Zhang, Wanrong
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2022, 69 (10) : 5612 - 5617
  • [32] A Fully Integrated S-Band Power Amplifier in 0.35um-SiGe BiCMOS Technology
    Li, Kang
    Huang, Guodong
    Yang, Xiaofeng
    Feng, Qian
    Zhu, Chaoxian
    Liu Chi
    MEMS, NANO AND SMART SYSTEMS, PTS 1-6, 2012, 403-408 : 2481 - 2484
  • [33] Low-Power and Low-Noise Programmable Frequency Dividers in a 130 nm SiGe BiCMOS Technology
    Ergintav, Arzu
    Herzel, Frank
    Borngraeber, Johannes
    Ng, Herman Jalli
    Kissinger, Dietmar
    2017 IEEE 15TH INTERNATIONAL NEW CIRCUITS AND SYSTEMS CONFERENCE (NEWCAS), 2017, : 105 - 108
  • [34] A SINGLE-CHIP RF POWER AMPLIFIER WITH INTEGRATED IMPEDANCE MATCHING WILKINSON POWER DIVIDERS FOR 5.2 GHz WLAN APPLICATIONS
    Kaymaksut, Ercan
    Gurbuz, Yasar
    Tekin, Ibrahim
    MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, 2010, 52 (11) : 2413 - 2419
  • [35] Improvement of photodiodes in 0.35 μm BiCMOS technology [Verbesserung von Fotodioden in Silizium/Germanium(SiGe)-0,35- μm-BiCMOS-Technologie]
    Marchlewski A.
    Schneider-Hornstein K.
    Zimmermann H.
    e & i Elektrotechnik und Informationstechnik, 2008, 125 (3) : 51 - 55
  • [36] Improvement of photodiodes in 0.35 mu m BiCMOS technology
    Marchlewski, A.
    Schneider-Hornstein, K.
    Zimmermann, H.
    ELEKTROTECHNIK UND INFORMATIONSTECHNIK, 2008, 125 (03): : 51 - 55
  • [37] 10Gb/s single-ended laser driver in 0.35μm SiGe BiCMOS technology
    Tsai, CM
    Huang, LR
    Li, DV
    Chang, CF
    ESSCIRC 2003: PROCEEDINGS OF THE 29TH EUROPEAN SOLID-STATE CIRCUITS CONFERENCE, 2003, : 289 - 292
  • [38] A Ku-Band 6-Bit Phase Shifter in 0.35-μm SiGe BiCMOS Technology
    Han, Xuesong
    Ma, Kaixue
    Mou, Shouxian
    Meng, Fanyi
    2017 IEEE ELECTRICAL DESIGN OF ADVANCED PACKAGING AND SYSTEMS SYMPOSIUM (EDAPS), 2017,
  • [39] Low phase noise IP VCO for multistandard communication using a 0.35-μm BiCMOS SiGe technology
    Coustou, A
    Dubuc, D
    Graffeuil, J
    Llopis, O
    Tournier, E
    Plana, R
    IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 2005, 15 (02) : 71 - 73
  • [40] A 4GS/s 8bit ADC Fabricated in 0.35μm SiGe BiCMOS Technology
    Wu, Danyu
    Jiang, Fan
    Zhou, Lei
    Wu, Jin
    Huang, Yinkun
    Jin, Zhi
    Liu, Xinyu
    2013 IEEE BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING (BCTM), 2013, : 69 - 72
12345