IMPEDANCE MATCHING WILKINSON POWER DIVIDERS IN 0.35 μm SiGe BiCMOS TECHNOLOGY

被引：4

作者：

Kaymaksut, Ercan ^{[1
]}

Gurbuz, Yasar ^{[1
]}

Tekin, Ibrahim ^{[1
]}

机构：

[1] Sabanci Univ, TR-34956 Istanbul, Turkey

来源：

MICROWAVE AND OPTICAL TECHNOLOGY LETTERS | 2009年 / 51卷 / 03期

关键词：

on-chip power divider; impedance matching; power amplifier;

D O I：

10.1002/mop.24159

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This article presents two miniature impedance matching Wilkinson power divider circuits in 0.35 mu m SiGe BiCMOS technology for on-chip power combining techniques for WLAN applications. The impedance matching Wilkinson power divider circuits are used as splitter/combiner for a 5.2 GHZ fully integrated class-A mode combined power amplifier. The splitter and combiner are designed to match the input and output impedances of the amplifier, respectively, so that no additional impedance matching is needed. Two fabricated impedance matching Wilkinson power divider circuits (splitter and combiner) have insertion losses better than 1.4 dB, return losses less than - 13 dB and port-to-port isolation >12 dB at 5.2 GHg (C) 2009 Wiley Periodicals, Inc. Microwave Opt Technol Lett 51: 681-685, 2009: published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.24159

引用

页码：681 / 685

页数：5

共 50 条

[1] Radiated Reliability for 0.35μm SiGe BiCMOS Technology
Wu, Xue
Cui, Wei
Zhu, Kunfeng
Yang, Yonghui
Tan, Kaizhou
Tang, Zhaohuan
2017 IEEE 24TH INTERNATIONAL SYMPOSIUM ON THE PHYSICAL AND FAILURE ANALYSIS OF INTEGRATED CIRCUITS (IPFA), 2017,
[2] Colpitts VCO in 0.35 μm SiGe BICMOS technology
Institute of RF-OE-ICs, Southeast University, Nanjing 210096, China
Guti Dianzixue Yanjiu Yu Jinzhan, 2008, 2 (313-316):
[3] Low power frequency dividers in SiGe:C BiCMOS technology
Wang, L
Sun, YM
Borngraeber, J
Thiede, A
Kraemer, R
2006 TOPICAL MEETING ON SILICON MONOLITHIC INTEGRATED CIRCUITS IN RF SYSTEMS, DIGEST OF PAPERS, 2006, : 357 - +
[4] UHF power amplifier design in 0.35μm SiGe BiCMOS
宋家友
HighTechnologyLetters, 2009, 15 (02) : 147 - 150
[5] A V-Band Power Amplifier With Integrated Wilkinson Power Dividers-Combiners and Transformers in 0.18-μm SiGe BiCMOS
Kim, Kyoungwoon
Cam Nguyen
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS, 2019, 66 (03) : 337 - 341
[6] Improvement of universal pin photodetectors in 0.35 μm SiGe BiCMOS technology
Marchlewski, A.
Zimmermann, H.
Jonak-Auer, I.
Meinhardt, G.
Wachmann, E.
ELECTRONICS LETTERS, 2009, 45 (13) : 705 - 706
[7] A novel HBT trigger SCR in 0.35 μm SiGe BiCMOS technology
廖昌俊
刘继芝
刘志伟
Journal of Semiconductors, 2016, 37 (09) : 80 - 85
[8] A 2.4GHz power amplifier in 0.35μm SiGe BiCMOS
郝明丽
石寅
半导体学报, 2010, 31 (01) : 65 - 68
[9] A 2.4 GHz power amplifier in 0.35 mu m SiGe BiCMOS
Hao Mingli
Shi Yin
JOURNAL OF SEMICONDUCTORS, 2010, 31 (01)
[10] Monolithic millimeterwave frequency tripler using a 0.35 μm BiCMOS SiGe technology
Coustou, A
Dubuc, D
Graffeuil, J
Tournier, E
Llopis, O
Boulanger, C
Plana, R
Telliez, I
2003 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS (RFIC) SYMPOSIUM, DIGEST OF PAPERS, 2003, : 487 - 490

← 1 2 3 4 5 →