IMPEDANCE MATCHING WILKINSON POWER DIVIDERS IN 0.35 μm SiGe BiCMOS TECHNOLOGY

被引：4

作者：

Kaymaksut, Ercan ^{[1
]}

Gurbuz, Yasar ^{[1
]}

Tekin, Ibrahim ^{[1
]}

机构：

[1] Sabanci Univ, TR-34956 Istanbul, Turkey

来源：

MICROWAVE AND OPTICAL TECHNOLOGY LETTERS | 2009年 / 51卷 / 03期

关键词：

on-chip power divider; impedance matching; power amplifier;

D O I：

10.1002/mop.24159

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This article presents two miniature impedance matching Wilkinson power divider circuits in 0.35 mu m SiGe BiCMOS technology for on-chip power combining techniques for WLAN applications. The impedance matching Wilkinson power divider circuits are used as splitter/combiner for a 5.2 GHZ fully integrated class-A mode combined power amplifier. The splitter and combiner are designed to match the input and output impedances of the amplifier, respectively, so that no additional impedance matching is needed. Two fabricated impedance matching Wilkinson power divider circuits (splitter and combiner) have insertion losses better than 1.4 dB, return losses less than - 13 dB and port-to-port isolation >12 dB at 5.2 GHg (C) 2009 Wiley Periodicals, Inc. Microwave Opt Technol Lett 51: 681-685, 2009: published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.24159

引用

页码：681 / 685

页数：5