Dirac-Point Shift by Carrier Injection Barrier in Graphene Field-Effect Transistor Operation at Room Temperature

被引：8

作者：

Lee, Sungsik ^{[1
,2
]}

Nathan, Arokia ^{[1
]}

Alexander-Webber, Jack ^{[1
]}

Braeuninger-Weimer, Philipp ^{[1
]}

Sagade, Abhay A. ^{[1
,3
,4
]}

Lu, Haichang ^{[1
]}

Hasko, David ^{[1
]}

Robertson, John ^{[1
]}

Hofmann, Stephan ^{[1
]}

机构：

[1] Univ Cambridge, Dept Engn, Elect Engn Div, 9 JJ Thomson Ave, Cambridge CB3 0FA, England

[2] Pusan Natl Univ, Dept Elect Engn, Pusan 46241, South Korea

[3] SRM Inst Sci & Technol, SRM Res Inst, Kattankulathur 603203, Tamil Nadu, India

[4] SRM Inst Sci & Technol, Dept Phys, Kattankulathur 603203, Tamil Nadu, India

来源：

ACS APPLIED MATERIALS & INTERFACES | 2018年 / 10卷 / 13期

基金：

英国工程与自然科学研究理事会;

关键词：

graphene field effect transistor; Dirac point; Fermi velocity; asymmetric injection; intrinsic carrier mobility; short-range scattering; CONTACT RESISTANCE; REALIZATION; LIMIT;

D O I：

10.1021/acsami.8b02294

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

A positive shift in the Dirac point in graphene field-effect transistors was observed with Hall-effect measurements coupled with Kelvin-probe measurements at room temperature. This shift can be explained by the asymmetrical behavior of the contact resistance by virtue of the electron injection barrier at the source contact. As an outcome, an intrinsic resistance is given to allow a retrieval of an intrinsic carrier mobility found to be decreased with increasing gate bias, suggesting the dominance of short-range scattering in a single-layer graphene field-effect transistor. These results analytically correlate the field-effect parameters with intrinsic graphene properties.

引用

页码：10618 / 10621

页数：4

共 25 条

[1] Encapsulation of graphene transistors and vertical device integration by interface engineering with atomic layer deposited oxide [J].