CMOS SPADs Selection, Modeling and Characterization Towards Image Sensors Implementation

被引：0

作者：

Moreno Garcia, Manuel ^{[1
]}

Guerra Vinuesa, Oscar ^{[1
]}

del Rio Fernandez, Rocio ^{[1
]}

Perez Verdu, Belen ^{[1
]}

Rodriguez Vazquez, Angel ^{[1
]}

机构：

[1] Univ Seville, CSIC, CNM, IMSE,Inst Microelect Sevilla, C Amer Vespucio S-N, Seville 41092, Spain

来源：

2012 19TH IEEE INTERNATIONAL CONFERENCE ON ELECTRONICS, CIRCUITS AND SYSTEMS (ICECS) | 2012年

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D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The selection, modeling and characterization of Single Photon Avalanche Diodes (SPADs) are presented. Working with the standard 180nm UMC CMOS process, different SPAD structures are proposed in combination with several quenching circuits in order to compare their relative performances. Various configurations for the active region and the prevention of the premature edge breakdown are tested, looking for a miniaturization of the devices to implement image sensor arrays without loses in their performance.

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页码：332 / 335

页数：4

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