Vacancy-induced dislocations within grains for high-performance PbSe thermoelectrics

被引:244
作者
Chen, Zhiwei [1 ]
Ge, Binghui [2 ]
Li, Wen [1 ]
Lin, Siqi [1 ]
Shen, Jiawen [1 ]
Chang, Yunjie [2 ]
Hanus, Riley [3 ]
Snyder, G. Jeffrey [3 ]
Pei, Yanzhong [1 ]
机构
[1] Tongji Univ, Sch Mat Sci & Engn, Minist Educ, Key Lab Adv Civil Engn Mat, 4800 Caoan Rd, Shanghai 201804, Peoples R China
[2] Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China
[3] Northwestern Univ, Dept Mat Sci & Engn, 2220 Campus Dr,3033 Cook Hall, Evanston, IL 60208 USA
来源
NATURE COMMUNICATIONS | 2017年 / 8卷
基金
中国国家自然科学基金;
关键词
LATTICE THERMAL-CONDUCTIVITY; IMPURITY DIFFUSION; HIGH FIGURE; SCATTERING; TELLURIUM; CRYSTALS; ALLOYS; ANTIMONY; BAND;
D O I
10.1038/ncomms13828
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
To minimize the lattice thermal conductivity in thermoelectrics, strategies typically focus on the scattering of low-frequency phonons by interfaces and high-frequency phonons by point defects. In addition, scattering of mid-frequency phonons by dense dislocations, localized at the grain boundaries, has been shown to reduce the lattice thermal conductivity and improve the thermoelectric performance. Here we propose a vacancy engineering strategy to create dense dislocations in the grains. In Pb(1-x)Sb2(x/3)Se solid solutions, cation vacancies are intentionally introduced, where after thermal annealing the vacancies can annihilate through a number of mechanisms creating the desired dislocations homogeneously distributed within the grains. This leads to a lattice thermal conductivity as low as 0.4 Wm(-1) K-1 and a high thermoelectric figure of merit, which can be explained by a dislocation scattering model. The vacancy engineering strategy used here should be equally applicable for solid solution thermoelectrics and provides a strategy for improving zT.
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页数:8
相关论文
共 61 条
  • [1] LATTICE THERMAL CONDUCTIVITY OF DISORDERED SEMICONDUCTOR ALLOYS AT HIGH TEMPERATURES
    ABELES, B
    [J]. PHYSICAL REVIEW, 1963, 131 (05): : 1906 - &
  • [2] THERMAL CONDUCTIVITY OF SELENIUM AND TELLURIUM SINGLE CRYSTALS AND PHONON DRAG OF TELLURIUM
    ADAMS, AR
    BAUMANN, F
    STUKE, J
    [J]. PHYSICA STATUS SOLIDI, 1967, 23 (01): : K99 - &
  • [3] [Anonymous], CRC HDB THERMOELECTR
  • [4] Cooling, heating, generating power, and recovering waste heat with thermoelectric systems
    Bell, Lon E.
    [J]. SCIENCE, 2008, 321 (5895) : 1457 - 1461
  • [5] High-performance bulk thermoelectrics with all-scale hierarchical architectures
    Biswas, Kanishka
    He, Jiaqing
    Blum, Ivan D.
    Wu, Chun-I
    Hogan, Timothy P.
    Seidman, David N.
    Dravid, Vinayak P.
    Kanatzidis, Mercouri G.
    [J]. NATURE, 2012, 489 (7416) : 414 - 418
  • [6] THERMODYNAMIC PROPERTIES OF IV-VI-COMPOUNDS - LEAD-CHALCOGENIDES
    BLACHNIK, R
    IGEL, R
    [J]. ZEITSCHRIFT FUR NATURFORSCHUNG SECTION B-A JOURNAL OF CHEMICAL SCIENCES, 1974, B 29 (9-10): : 625 - 629
  • [7] LOWER LIMIT TO THE THERMAL-CONDUCTIVITY OF DISORDERED CRYSTALS
    CAHILL, DG
    WATSON, SK
    POHL, RO
    [J]. PHYSICAL REVIEW B, 1992, 46 (10): : 6131 - 6140
  • [8] EFFECT OF POINT IMPERFECTIONS ON LATTICE THERMAL CONDUCTIVITY
    CALLAWAY, J
    VONBAEYER, HC
    [J]. PHYSICAL REVIEW, 1960, 120 (04): : 1149 - 1154
  • [9] de Kock A. J. R., 1971, Journal of the Electrochemical Society, V118, P1851, DOI 10.1149/1.2407850
  • [10] EFFECTS OF DISLOCATIONS ON MOBILITIES IN SEMICONDUCTORS
    DEXTER, DL
    SEITZ, F
    [J]. PHYSICAL REVIEW, 1952, 86 (06): : 964 - 965